多晶结构金属薄板的塑性各向异性分析

从晶体学理论出发,将多晶体看作有不同取向的单晶集合体,认为单晶体各个滑移系的开动相互独立,从而简化计算模型。同时利用从实测极图分析得到了三维晶粒取向分布函数作为权函数,对多晶结构圆板深拉延后径向应变进行平均化处理,得出薄圆板法部分的径向应变沿环向不均匀分布,其峰值个数及位置同已有实验结果相一致,表明模型正确,方法可行。     

木材径向反复受压应力-应变模型研究

通过木材小清材试样的单调加载和反复加卸载试验,研究了木材径向全表面受压试样在单调加载和反复加卸载作用下的应力-应变关系.试验结果表明:单调加载应力-应变曲线和反复加卸载骨架曲线在应变小于0.16时基本重合,在应变大于0.16时,两者数值差异逐渐增大,但仍可由同一数学模型进行描述;木材反复卸载、再加载过程中,再加载路径与卸载路径分别由线性和双折线模型表达.综合考虑木材单向横纹受压以及反复加卸载过程中的典型特征,建立了反复荷载作用下木材径向全表面受压应力-应变模型.基于所建模型编写了MATLAB程序,对比分析了模型计算结果与试验结果,两者吻合较好.     

三通管接头径向挤压的刚塑性有限元研究

本文从实验和理论两方面验证了等径三通管接头径向挤压时的金属流动过程属于平面应变问题,应用Lee和Kobayashi S提出的刚塑性有限元法导出了模拟平面应变问题的刚塑性有限元数学模型的具体显式,编制了一套微机上模拟等径三通管接头径向挤压过程的程序.成功地模拟了等径三通管接头的径向挤压过程,计算了应变速率场和应力场的分布值,初步掌握了径向挤压时的金属流动规律.     

负压条件下高含水率疏浚泥轴对称大应变固结模型

基于Gibson一维大应变固结理论和Hansbo径向固结理论,摒弃小应变假定,引入负压边界条件,建立了等应变条件下以孔隙比为变量的负压轴对称大应变固结(NALSC)模型.NALSC模型同时考虑了高含水率疏浚泥的材料和几何非线性、径竖向渗流、负压沿深度衰减等因素,其他学者建立的固结方程是NALSC模型的特例.基于线性化的材料参数,对固结度变化时程进行了数值模拟,结果表明,在不同的渗流条件和真空度衰减方式下,NALSC模型与现有模型的固结度计算值基本吻合;土层厚度与砂井有效加固直径比值不小于10时,土体主要发生径向固结,竖向固结可以忽略;NALSC模型的计算精度较高,适用于高含水率疏浚泥的大应变固结性状分析.     

多孔球形电极颗粒中的扩散-应力耦合分析

具有良好化学稳定性及较高存储容量的多孔材料在锂离子电池及超级电容器中有广泛的应用,但已有的扩散-应力耦合模型大多忽略多孔材料的微观结构.基于此,建立考虑孔隙率和迂曲度的多孔球形电极颗粒中的扩散-应力耦合模型.针对Mn_2O_4电极进行恒压充电下的数值计算,探讨孔隙率和迂曲度系数对锂离子浓度、径向应力、环向应力及体积应变的影响,并将模型结果与他人结果进行对比.数值结果表明:迂曲度系数越大,电极中锂离子的扩散越差、体积应变越小且径向应力和环向应力越大;孔隙率越大,电极中的锂离子浓度和体积应变越大但径向应力和环向应力越小;多孔电极结构更有利于提高嵌锂能力.因此,应选择孔隙率大且迂曲度系数小的材料作为高存储容量的电极材料.     

脆性材料斜裂纹断裂与损伤耦合分析

对单向拉伸的斜裂纹,应用西多霍夫损伤模型和断裂力学耦合分析方法,推导出脆性材料斜裂纹损伤区与断裂区的边界方程,确定了脆性材料斜裂纹初始损伤区和断裂区的径向尺寸.提出了裂尖断裂区内径向应变能的概念,并建立了基于此概念上的裂纹扩展准则,即裂尖断裂区内径向最小应变能(RMSE)判据,从而确定了脆性材料斜裂纹在断裂区边界上的开裂角.最后确定了不同裂纹倾角起裂点的坐标.     

面心纯铝轧制织构的晶体塑性有限元模拟

基于率相关晶体塑性本构模型,分别将Taylor模型和有限单元模型两种多晶模型嵌入大型有限元程序ABAQUS,实现了晶体塑性学有限元模拟. 直接将电子背散射衍射(EBSD)获取的晶粒初始取向输入晶体塑性有限元模型,预测了两种不同应变情况下面心1 050纯铝轧制织构的演化. 模拟结果与EBSD实验测得的织构演化结果有较好的一致性,随着变形程度的增加,预测织构与实测织构变得更加锋锐. 经过比较,Taylor型模型预测出了{4 4 11}〈11 11 8〉的Dillamore取向,而有限单元模型预测出了铜型织构取向,比Taylor模型预测结果更接近实验验证结果. 两种模型并不能预测出{011}〈211〉黄铜取向、{123}〈523〉S取向、{011}〈100〉Goss取向及其他理想取向.     

球形生物材料干燥时的弹性应力研究

建立了弹性应变状态下,生物材料干燥的应力应变模型。应用此模型,可以在得到物料各单元层含水率变化的基础上,得到各单元层的应力与应变。以球型土豆为例,得到:在恒速干燥期,各单元层径向应力与剪切应力逐渐增大,并且剪切应力在1 h～2 h之间达到最大值,径向应力在1 h～3 h之间达到最大值。剪切应力最大值出现在表层,径向应力最大值则出现在含水率高的核心部位。各单元层的应力在达到最大值后缓慢减小,最终接近于零。     

SHPB的径向惯性效应修正

惯性效应是造成SHPB试验中试件应力不均匀和多轴性的主要因素.对SHPB试验中的径向惯性效应进行了分析,发展了Dharan修正模型,考虑了径向应力的不均匀分布和试验加载过程中试件变形速度的变化,推导了新的径向惯性修正公式.计算分析表明,修正公式可有效减小测试应力应变曲线的振荡,消除波形中上升沿波头对屈服应力测试的影响.     

岩石单轴受压体应变与长期强度关系

为了验证可根据岩石单轴受压体应变最大值大致对应出岩石的长期强度这一观点,对4个砂岩试样进行单轴受压试验,采用千分表测出受压过程中的径向变形,计算出径向应变和体应变,得出岩样单轴受压时轴向应力-体应变曲线,结果表明:岩石单轴受压时发生的是剪切破坏,轴向应力-体应变曲线极不规则.得出的结论是无法根据岩石单轴受压体应变的变化特征确定出岩石的长期强度.     

织构对NiTi合金相变伪弹性的影响及其计算机模拟

近等原子比热轧态NiTi合金板材有较显著的择优取向,使该合金的相变伪弹性呈现明显的各向异性.拉伸实验表明拉伸轴沿与轧向成45°夹角的方向,相变伪弹性最好;沿轧向,次之;沿横向,最差.文中对NiTi织构进行了取向分布函数定量分析,并改进了NiTi单晶相变应变的晶格变形矩阵理论,以取向分布密度为加权因子,对该合金多晶的相变伪弹性进行了计算机模拟,所得结果与实测值吻合得较好.     

光电子能谱在钒酸钇晶体生长中的应用

应用光电子能谱分析了钒酸钇（YVO4）多晶斜与单晶之间的关系，成功生长出低缺陷的YVO4晶体，并对晶体进行检测。由检测结果得出，YVO4晶体的小角晶界，散射中心等缺陷与多晶斜的Y,V质量比有密切的关系，晶体的外形变形、与晶体温度场关系较大。     

Creep and friction of ice

The creep of polycrystalline ice in uniaxial compression has been studied over a very wide range of strain rates. The creep is far too slow to explain the friction of ice observed at very low sliding speeds, but experiments with single crystals show that sliding produces recrystallization at the interface, the ice presenting an orientation favourable to easy glide in directions tangential to the interface.     

Thermoelectric properties of polycrystalline (SnSe)1-x(AgSnSe2)x/2 alloys

SnSe is considered as a thermoelectric material with great potential and advantages due to the record of high thermoelectric figure of merit (ZT) of 2.6 ?at 923 ?K in single crystals. However, it is difficult to use single crystal SnSe in practice due to its poor mechanical properties and high manufacturing costs. Meanwhile, the polycrystalline SnSe also is also not suitable for applications due to its much lower thermoelectric performance compared with single crystal SnSe. Therefore, improving the thermoelectric properties of polycrystalline SnSe has become a hot research topic. In this paper, AgSnSe₂ doped into SnSe to increase the carrier density of the system and thus improve its thermoelectric properties. It is found that the addition of AgSnSe₂ can effectively improve the thermoelectric performance of polycrystalline SnSe. A peak ZT of 0.81 was obtained at 713 ?K for (SnSe)_0.95(AgSnSe₂)_0.025, which is 305% higher than that of the undoped one. This reveals that AgSnSe₂-doped SnSe alloy may become a thermoelectric material system with great application potential and significance.     

铝合金板材制耳的理论测算

应用Tucker单晶制耳理论,结合晶体学取向空间划分的方法,预测铝合金板材中各织构组分所引起的制耳倾向类型及相对大小·首先对{100}〈001〉和{110}〈112〉取向单晶的制耳进行模拟,发现与Tucker单晶制耳理论所得结果完全一致·再将该方法应用于无织构的板材、冷轧板材、退火板材及西南铝厂生产成品板材的制耳计算,结果与理论预期值符合较好·此计算方法可以快速有效地预测板材制耳发生的倾向,并可以用于深冲铝合金板材的织构调控·基于"工艺 织构 制耳"关系的研究,有助于建立合适的织构/性能快速预报系统·     

立方晶体宏观织构取向分布函数的程序化

取向分布函数(ODF)从宏观整体上反映了多晶体各晶粒取向的统计分布,它突破了传统的极图法、反极图法用一维或二维图形来描述晶体的空间取向分布的局限性,可实现晶体取向分布的三维空间描述.针对具有立方结构的多晶体材料,采用级数展开法模型计算取向分布函数的理论模型,利用程序对ODF值进行了计算,并以Voronoi增量算法为基础生成包含有5000个晶粒的多晶体材料各晶粒的几何数据信息,与计算得到的ODF值一起导入OpenGL进行可视化处理,直观显示了多晶体材料中ODF值在各晶粒内的分布.通过对立方系多晶体材料的ODF测算,对该种材料的织构类型研究与分布规律分析具有重要的指导意义.     

面心立方金属的基于位错密度的循环本构模型

在晶体塑性理论框架下,建立适用于面心立方金属多晶材料的基于位错密度的循环本构模型.在各向同性硬化律中总位错密度被离散为螺位错和刃位错两部分,考虑了位错增殖、湮灭和相互作用的演化机制,同时采用了修正的非线性随动硬化律,建立单晶的循环本构模型,通过显式尺度过渡准则,把该模型拓展到多晶尺度.应用该模型模拟了典型面心立方结构材料多晶铜的棘轮行为.数值模拟结果表明,该模型不仅可以从多晶尺度模拟材料的棘轮行为和循环硬化特征,还可以从单晶尺度预测不同晶向和不同应力水平下的棘轮行为.     

An atomic level study on the out-of-plane thermal conductivity of polycrystalline argon nanofilm

At present, there have been few direct molecular dynamics simulations on the thermal conductivity of polycrystalline nanofilms. In this paper, we generate polycrystalline argon nanofilms with random grain shape using the three-dimensional Voronoi tessellation method. We calculate the out-of-plane thermal conductivity of a polycrystalline argon nanofilm at different temperatures and film thicknesses by the Muller-Plathe method. The results indicate that the polycrystalline thermal conductivity is lower than that of the bulk single crystal and the single-crystal nanofilm of argon. This can be attributed to the phonon mean-free-path limit imposed by the average grain size as well as the grain boundary thermal resistance due to the existence many grain boundaries in polycrystalline materials. Also, the out-of-plane thermal conductivity of the polycrystalline argon nanofilm is insensitive to temperature and film thickness, and is mainly dominated by the grain size, which is quite different from the case of single-crystal nanofilms.     

影响AgGa1-xInxSe2多晶合成质量的因素分析

高纯AgGa1-xInxSe2多晶料,是进行单晶生长的关键和前提．本文以合成AgGa0.8In0.2Se2为例,对影响AgGa0.8In0.2Se2多晶合成质量的因素进行研究．发现借鉴Ag2Se-Ga2Se3赝二元相图,采用同成分点配料方式合成AgGa0.8In0.2Se2多晶,比采用化学计量比配料合成的多晶质量更高．通过对比实验,发现采用机械和温度振荡相结合的方法能有效减少多晶料块中空洞的产生,将上下振荡温度从900℃和800℃提高到1060℃和900℃时,得到的多晶料块更致密．     

Inkjet printing of single-crystal films

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4?cm(2)?V(-1)?s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.