放电等离子烧结制备碳化硅块材及其高温导热性能研究

通过放电等离子烧结制备了碳化硅块材,分析了烧结温度、保温时间等对碳化硅块材的密度、物相组成、微观形貌和硬度的影响,并对其高温导热性能进行了测试.结果表明,当烧结温度为1800℃,保温时间为5min时,通过放电等离子烧结能够获得致密度为98%的碳化硅块材.与传统热压烧结相比,放电等离子烧结制备的碳化硅块材的热导率略低,其主要原因是放电等离子烧结的保温时间较短与烧结样品的致密度略低,且晶界结合性较差所导致.     

Y-211与Y2O3掺杂的熔融织构YBCO的超导钉扎效应及微结构研究

采用顶部籽晶熔融织构法,结合Y_2O_3和Y-211掺杂制备了高质量的准单畴YBCO块材.Jc测量结果表明,对于Y_2O_3掺杂的YBCO块材,其临界电流密度Jc在10K温度和0.6T磁场下达到1.60×10~6A/cm~2,用合作钉扎理论可推得,其在70K温度和2T磁场下为1.24×10~4/cm~2。扫描电镜观察结果表明,掺杂Y_2O_3所形成的Y-211粒子是柱状的,而掺杂Y-211在母体材料中是球形的,其尺寸接近纳米粒子。掺杂Y_20_3比Y-211更能增强磁通钉扎效应并有效地改善样品的生长状况。Y-211粒子与超导母体材料之间的界面对磁通钉扎起主要作用,Y-211粒子作为强钉扎中心属于界面钉扎。     

无定形C掺杂对MgB2微结构和超导电性的影响

采用原位法粉末装管工艺制备了MgB2-xCx/Nb/Cu单芯线材.通过X射线衍射(XRD)、扫描电镜(EMS)和物性测试仪(PPMS)等手段研究了无定形C掺杂对线材微观结构及超导电性的影响.结果显示,随着C掺杂量的增加,进入MgB2晶格的C含量增加,MgB2层间结构不变.样品性能达到实用化超导磁体要求,在温度30 K外场0.2 T条件下,C掺杂量x=0,0.05,0.10,0.15的样品临界电流密度分别达8.1×104,1.7×105,1.6×105和1.0×105A/cm2.实验表明最佳C掺杂量x在0.05与0.10之间.     

多晶MgB2相形成中纳米尺寸硼粉的作用

原料硼粉在MgB2相形成中的作用已经利用原位高温电阻率(HT-ρT)的测量技术进行了研究.MgB2相形成中的起始转变温度Tonset和相转变完成温度TPF在完成了的热处理过程中已直接确定了.用纳米硼粉和镁粉制备MgB2样品(简称为NanoB-MgB2)时的Tonset和TPF这2个温度值分别是440和 490 ℃,类似于用微米硼粉和纳米镁粉制备MgB2样品(简称为MicroB-MgB2)的情况.这表明MgB2相形成的温度并不特别依赖于硼粉的尺寸.另外,烧结温度的上极限TN是750 ℃,在此温度下NanoB-MgB2样品的超导电性将丧失.此温度远低于用微米硼粉和毫米尺寸的镁粉制备的MgB2样品(简称为DM-MgB2)的TN= 980 ℃.把直接在650 ℃＜T N,烧结的样品与先在750 ℃下烧结,之后又再次重磨和处理后,并于富镁的环境中在650 ℃下再烧结处理的样品相比较,观察到了MgB2的不可逆的晶体结构转变.     

超高载流能力的干净极限MgB2薄膜与超高上临界场的碳掺杂MgB2薄膜

本本文报道了基于混合物理化学气相沉积方法制备高质量干净极限MgB2薄膜和碳掺杂MgB2薄膜的最新结果.c轴外延干净的MgB2薄膜具有高达41.4K的超导转变温度,低于0.3μΩcm的正常态剩余电阻率.样品处于干净极限.薄膜表面RMS粗糙度小于5nm,在150nm宽的纳桥上测量到了大于1×108A/cm2的临界电流密度,接近MgB2,材料理论上的拆对电流密度,同样的结果也从对相同样品的磁性测量中推导得到.利用甲烷作为碳源,基于改进的热丝辅助混合物理化学气相沉积装置,高性能碳掺杂MgB2薄膜得以成功实现.不同程度的碳掺杂调制了MgB2双能带的带内和带间散射,进而明显增强了薄膜的上临界场.在重碳掺杂MgB2薄膜样品中,平行于样品表面的上临界场分量,Hc2//ab在临界温度(27K)附近对温度的斜率,-dHc2//ab/dT达到了3 T/K,暗示了样品具有非常高的上临界场Hc2//ab(0).碳掺杂同时使得样品的磁通钉扎能力得到很大增强.高场下具有比干净样品高出数个量级的临界电流密度,和更高的不可逆场.     

无压烧结凹凸棒块材的热导率研究

为探索凹凸棒天然矿物作为隔热材料的应用潜力，采用无压烧结方法制备了凹凸棒块材，研究了烧结温度对样品相组成、表面形貌、孔隙率以及热导率的影响.结果表明：随着烧结温度的升高，凹凸棒块材由以700℃时的石英相为主，转变为800～900℃时的石英与顽火辉石两相共存以及1 000～1 200℃时的石英、顽火辉石和方石英三相共存；微观结构由疏松的纤维形态，转变为以SiO₂为基体、MgO·SiO₂为第二相的致密结构，孔隙率显著降低.凹凸棒块材的热导率随着烧结温度的升高而增大，700℃下烧结的凹凸棒块材具有极低的热导率，室温下热导率为0.16 W/(m·K),且几乎不随测试温度的变化而变化，因此凹凸棒天然矿物作为隔热材料具有很大的潜力.     

粉末套管法制备碳掺杂MgB2线材及其超导电性

采用原位粉末套管法制备了无定形碳掺杂MgB2/Nb/Cu超导线材。利用扫描电镜、输运法测试和磁测法等手段分析了无定形碳掺杂对超导线材的微观结构和超导电性的影响。结果表明,无定形碳掺杂降低了线材的临界转变温度,但可以显著提高超导线材的临界磁场和临界电流密度,750℃处理线材在20K下的不可逆场达到5.2T。实验结果表明,采用无定形掺杂原位粉末套管法可以制备出具有高临界电流密度的MgB2线材。     

压埋法制备MgB2超导材料的工艺

介绍了一种用压埋法合成块状MgB2超导体的新方法。采用该方法得到的样品的临界温度可高达38．4K，与常规方法得到的样品的临界温度相近。对这种方法的合成工艺进行了探讨，发现烧结温度(Ts)和保温时间(t)对样品的临界温度影响很大。在相同的0．5h保温时间条件下，烧结温度在1073-1123K温区获得的样品临界温度最高。固定烧结温度(1123K)，不同保温时间下获得的样品的临界温度随着保温时间的增加而降低。进一步对样品的剩余电阻率比(RRR)进行研究，实验结果表明随着RRR数值的增加临界转变温度下降。这可能与样品内过量的杂质有关。     

Superconducting Properties and Microstructure in MgB2 Bulks, Wires and Tapes

We prepared a series of MgB2 bulk samples under different temperatures, holding time and increasing rates in temperature by the solid state reaction. The thermodynamic behavior and phase formation in the Mg-B system were studied by using DTA, XRD and SEM. The results indicate that the formation of the MgB2 phase is very fast and the high increasing rate in temperature is necessary to obtain high quality MgB2. In addition, the effects of the Zr-doping in Mg1-xZrxB2 bulk samples fabricated by the solid state reaction at ambient pressure on phase compositions, microstructure and flux pinning behavior were investigated by using XRD, SQUID magnetometer, SEM and TEM. Critical current density Jc can be significantly enhanced by the Zr-doping and the best data are achieved in Mg0.9Zr0.1B2. For this sample, Jc values are remarkably improved to 1. 83 × 106 A/cm2 in self-field and 5. 51 × 105 A/cm2in 1T at 20K. Also, high quality MgB2/Ta/Cu wires and tapes with and without Ti-doping, MgB2/Fe wires and 18 filamen     

零电阻温度为110K的Bi-Sr-Pb-Ca-Cu-O超导材料的制备与研究

采用固相反应法制备含Pb的Bi-Sr-Ca-Cu-O新体系超导块材,超导电性与热处理工艺密切关联。在液氮温区以上体系存在Tc为110K和85K两个超导相。寻求最佳工艺条件可获得稳定性较好的零电阻温度为110K的块状样品。     

YBa_2Cu_3O_x体材料在液氮温区的临界电流密度J_c

以定向反应合成的 YBa_2Cu_3O_x 为原料,用加大成型压力——高温熔化——三段热处理工艺,可将 YBa_2Cu_3O_x 体材料的 J_c 提高到 713 A/cm~2(78 K);讨论了晶粒间界的空隙,微区化学组成不均匀性,高温熔化及凝固过程对 J_c的影响。结果表明,采用较大压力成型,高温熔化工艺,提高碳酸盐分解率,有助于提高临界电流密度J_c。     

GH-O型椰子壳活性炭低温吸放气特性研究

本文通过低温(18～22K),低压(10~(-5)～10~(-2)Pa)下,H_2在 GH-O型椰子壳活性炭上吸附等温线、吸附动办学特性和常温放气特性的实验研究,着重讨论了在实验条件下,GH-O 活性炭对 H_2的吸附容量、吸附热、吸附平衡时间和扩散系数 D 与活性炭的表面温度、表面覆盖度、空间压强等的变化关系.结果发现,H_2在 GH-O 活性炭上的吸附等温线符合弗洛德利胥方程;对 H_2的最大吸附量为170cm~3(STP)/g;吸附热由吸附量的10cm~3(STP)/g 的344J/mol(1440cal/mol)降到170cm~3(STP)/g 的238.8J/mol(1000cal/mol);吸附平衡时间 t_∞为2～5h;在(18～22K)时,扩散系数 D 约为10~(-7)cm~2/s 数量级.     

DNA/CTC双向捕集离子液体浮选分离测定废水中痕量Ni(Ⅱ)

在一定条件下,Ni(Ⅱ)在溶液中能够被脱氧核糖核酸(DNA)和金霉素(CTC)双向捕集,形成Ni-CTC-DNA三元缔合物.该缔合物具有良好的疏水性,利用离子液体[bmim]BF_4浮选体系可以将其从混合溶液中分离提取出来.研究了缔合物形成和离子液体浮选过程的影响因素,得到了三元缔合物生成和浮选分离的最优条件.线性回归方程为A=8.03×10⁵C-0.000 3,线性范围为4.7×105C-0.000 3,线性范围为4.7×10^(-8)(-8)⁶.5×106.5×10^(-3)mol/L,摩尔吸光率为8.03×10(-3)mol/L,摩尔吸光率为8.03×10⁵L·mol5L·mol^(-1)·cm(-1)·cm^(-1),检出限为1.8×10(-1),检出限为1.8×10^(-8)mol/L.该方法可用于工业废水中重金属镍离子的快速检测分析.     

Zn掺杂对MgB2电子结构及超导转变温度的影响

建立Zn掺杂含量不同的6个MgB2模型Mg1-xZnxB2（x=0,1/18,1/16,1/12,1/8,1/6）,对模型进行参数优化,分析Zn掺杂对MgB2几何构型的影响;计算纯MgB2和x为1/6,1/8,1/12时掺杂模型的能带结构和态密度,对得到的结果进行分析和处理,并指出Zn掺杂时MgB2超导临界转变温度Tc变化的大致规律.根据强耦合BCS理论的Mc-Millan公式,推导第一性原理计算公式,计算Zn掺杂MgB2的超导临界转变温度Tc.     

射频溅射a—Si：F,H中载流子的低温传导

在300－77K温区内对射频溅射制备的a-Si:F,H薄膜样品作了直流电导测量，结果表明，当T＞200K时载流子的传导是以最近邻跳迁传导为主，而在77K＜T＜140K温区变程跳跃传导点了主要地位，费米能级附近的隙态密度约为10^20cm^-3eV^-1。     

自蔓延高温合成MgB2粉末

利用自蔓延高温合成法成功制备了MgB2粉末.通过热力学计算、X射线衍射图谱分析了各相生成的先后顺序及转化关系,探讨了合成反应产物中的相组成、MgB2的分解温度等.结果表明,自蔓延高温合成法能制备无MgB4等杂质相的单相MgB2,且晶粒细小易于分解.     

Investigation of microenvironment-depended photoluminescence in Eu3+-implantation of GaN

GaN thin films grown on sapphire were implanted by Eu~3+ with three different fluences (5.0×10~14 , 2.5×10~15 and 5.0×10~15cm~-2 ). The photoluminescence (PL) spectra show that, after annealing, the samples exhibit strong emission at around 622.0 nm under 325 nm laser excitation. The intensity of this emission increases by one order of magnitude after annealing at from 600 ℃ to 900 ℃. Moreover, it increases less than 2 times when the fluence increases from 5×10~14 cm~-2 to 5×10~15 cm~-2 for the sample annealing at 900 ℃. The PL emission peaks around 622 nm of samples annealing at 900 ℃ can be well clarified by Gaussian fitting into 620.2, 622.0 and 625.0 nm, which are due to the Eu~3+ related with defects, Eu~3+ occupied at substitutional positions of Ga, and that located at interstitial sites, respectively. It shows that the different microenvironments and positions of Eu~3+ are responsible for these peaks, and especially the defects introduced by implantation play an important role in the behavior of the PL because they set up an energy transmission bridge from exotic photons to Eu~3+ .     

Preparation and characterization of cobalt-doped iron pyrite(FeS_2) thin films

Iron pyrite (FeS_2) incorporated with cobalt dopant varying from 2%to 6%atomic ratio,was synthesized by using an aqueous hydrothermal process.The thin films of Co-doped FeS_2were fabricated by a vacuum thermal evaporation of synthesized FeS_2powder.The structural,electrical and optical properties of as-deposited and sulfurized films were investigated.The X-ray diffraction results indicated that the synthesized powder and thin films showed a cubic pyrite structure.The crystallinity of FeS_2was slightly degraded by the doping of cobalt.The dependence of thin-film resistance on the temperature indicated an increase of activation energy until 3 at%cobalt doping and then decreased the resistance with the increase of cobalt concentration.Hall effect measurements showed that the Co-doped samples have n-type conduction except for the 2 at%.The carrier concentration was in the order of 10~(18)cm~(-3),whereas,the carrier mobility decreased from 6.52 cm~2/V.s to 4.3 cm~2/V.s with the increase of cobalt dopant.The photosensitivity of undoped and cobalt-doped FeS_2films was measured under AM 1.5G and NIR light.The sulfurized films showed a higher photoresponse than the asdeposited films for both visible and IR lights.     

微片混合电路计算机辅助设计

本文以印刷电路板布图软件为基础,结合表面组装电路特点,以电子调谐器电路为典型微片混合电路,实现了在面积为9.5×5cm~2的双层版面上计算机辅助布图设计。布通率为100％,组装密度达4只元器件/平方厘米,电路级间连线的寄生电容和寄生电感分别低达10~(-12)F和10~(-8)H量级。     

Doping effect on thermoelectric properties of nonstoichiometric AgSbTe<Subscript>2</Subscript> compounds

Nonstoichiometric ternary thermoelectric materials Ag_0.84Sb_1.15M_0.01Te_2.16 (M=Ce, Yb, Cu) were prepared by a direct melt-quench and hot press process. The carrier concentration of all the samples increased after doping. Thermoelectric properties, namely electrical conductivity, Seebeck coefficient, and thermal conductivity, were measured from 300 to 673 K. The phase transition occurring at about 418 K representing the phase transition from β-Ag₂Te to α-Ag₂Te influenced the electrical transport properties. The electrical conductivities of Ce and Yb doped samples increased after doping from 1.9×10⁴ to 2.5×10⁴ and 2.3×10⁴ S·m⁻¹, respectively, at 673 K. Also, at room temperature, the Seebeck coefficient of the Ce doped sample relatively increased corresponding to the high carrier concentration due to the changes in the band structure. However, all the thermal conductivities increased after doping at low temperature. Because of the higher thermal conductivity, the dimensionless figure of merit ZT of these doped samples has not been improved.