2维光子晶体波导结构的耦合特性研究

利用有限时域差分法对2维3角晶格空气缺陷及介质柱缺陷波导结构的传输特性进行研究,讨论了耦合长度和耦合间距对空气缺陷波导、缺陷介质柱半径大小等对介质柱缺陷波导耦合性能的影响.结果显示:(1)耦合长度越长、耦合间距越小,空气缺陷波导的耦合性能就越好,适当调节耦合长度和耦合间距可得到任意分光比的光耦合器;(2)缺陷介质柱的半径ra＜0.1a时,随着ra的增大耦合作用明显减弱,但在0.325～0.344(a/λ)范围内,耦合波导和直接波导的透过率比值基本保持为1:1,这对于功率分配器的研究具有一定参考价值.     

圆柱形金纳米线中表面等离激元的传输性质研究

从理论上研究了圆柱形金纳米线中, 可见光波长下(λ= 632. 8 nm) 表面等离激元模式的传输性质。通过求解麦克斯韦方程组, 得到圆柱形金纳米线中表面等离激元波导的传播常数, 进而得到表面等离激元模式的传输性质, 包括其传播长度及有效半径等。还发现了表面等离激元模式的传输性质受到模式结构以及介质介电常数的影响, 并且得到了表面等离激元传输距离和能量局域之间的普遍矛盾, 即能量局域越好传播距离越短。通过计算, 能够在特定的结构参数下获得较好的局域特性和传播长度, 例如, 当金属芯半径为 40 nm, 介质( SiO₂ ) 厚度为 40 nm时, HE₁₁ 模式的传播长度为 103. 6 μm, 有效半径 642nm。     

硒化镉纳米线弹性性能的分子动力学模拟

采用分子动力学方法对硒化镉纳米线的弹性性能进行模拟,系统地研究了不同大小的硒化镉纳米线的弹性性质,得出其杨氏模量及泊松比与半径的变化关系．计算结果表明：在材料的弹性范围内,硒化镉纳米线的杨氏模量和泊松比均随着半径的增大而减小,且纳米线的杨氏模量比块体的大很多;纳米线横截面原子键长分布情况表明这种关系是由纳米体系表面效应随着体系的变小而增大这一性质决定的．     

三波长光子晶体耦合波分复用器的设计与仿真

目前,光子晶体的波导共振耦合技术被广泛应用,设定波长下的波导透射频率的高低成为影响器件功能优劣的重要因素。首先对比了改变光子晶体介质柱折射率和半径的大小与耦合点归一化频率的关系,之后利用时域有限差分法设计了一种由三种波导构成的共振耦合型光子晶体结构的波分复用器,并且在波长分别为1 490 nm与1 440 nm的光信号下的波导共振区域增加了一定数量的介质柱形成一种新的微腔耦合区域。并且通过在1 310 nm波长的输出信道末端改变介质柱的半径大小,使得1 310 nm波长的光信号的透射率提高到了95.5%。研究表明,通过增大介质柱半径的大小Rc,可以使得对应的光信号透射率的大幅改善。     

长度可调的纳米线阵列近红外减反射特性

采用金属催化化学腐蚀方法在单晶硅表面制备了有序的纳米线阵列,研究了纳米线长度与腐蚀时间之间的关系,发现纳米线长度随着腐蚀时间的增加而增大。测试了所制备的具有纳米线阵列的硅表面在近红外1000nm～2500nm范围内的减反射性能。测试结果表明,与未处理的光滑硅表面相比,具有纳米线阵列的表面的反射率大辐降低,并随着纳米线长度的增加,反射率减小。     

压电纳米线尺寸与机电转换性能的有限元研究

采用有限元分析方法研究压电纳米线的形变方式和尺寸对机电转换性能的影响.结果表明,在相同外力作用下,压电纳米线径向弯曲产生的压电势是轴向弯曲的7倍,前者比后者具有更高的机电转换效率.压电纳米线径向弯曲模型中,应力和电场为非均匀分布.纳米线长度的增加可提高其弯曲时产生的压电势,当纳米线长度较短时,应力和电场的非均匀分布使压电势随纳米线长度的增加非线性增大.当纳米线长度超过20 mm时,可忽略非均匀分布对机电转换效率的影响,压电势随纳米线长度的增加线性增加.1     

波导芯层折射率不同的定向耦合器研究

利用耦合理论研究了芯层折射率不同的定向耦合器的耦合特性,得到了其耦合波方程的通解.给出了不同入射条件下波导耦合引起的光场功率和相位的变化特性,并与通常理论研究的等芯层折射率的结果进行了比较.特别指出,等芯层折射率的光波导耦合特性是本文所研究耦合特性的特例,对于芯层折射率不同的双波导定向耦合器,当光从折射率较大的波导入射时,两波导中的光场功率存在着周期性的不完全交换,芯层折射率较大的波导相对于另一波导的相位差有起伏地反向增大,而等芯层折射率时两波导间有周期性的完全功率交换,光场间相位差为π/2;当等强度光从两个波导入射时,光在两波导传输过程中存在功率交换,芯层折射率较大的波导相对于另一波导的相位差有起伏地增大,而等芯层折射率时两波导间没有功率交换,光场等振幅、等相位传播.     

基于MIM波导缺陷谐振环结构的传输特性研究

应用时域有限差分方法(FDTD)研究了基于金属-介质-金属(MIM)波导缺陷谐振环结构的传输特性.该结构由一通道波导和位于通道上方的缺陷谐振环组成,与无缺陷谐振腔结构相比,缺陷谐振环结构破坏了环形腔原有的共振模式,从而呈现出新颖的滤波特性.当缺陷尺寸发生改变时,谐振环有效长度发生变化,通过调整缺陷的尺寸,可以有效调节滤波波长,其数值计算值与传输线理论值基本吻合.此外,通道波导与谐振环间的耦合强度在一定程度上依赖于缺陷的位置,因此通过调节缺陷的位置可以有效控制滤波强度.与其他滤波器相比,此结构在不改变结构总尺寸的情况下,可调节滤波波长,实现了更宽频段的滤波,并有效调节其透射率.当缺陷尺寸设定为某一特定值时,能实现模式间的简并,提高滤波性能.     

亚波长孔阵透射增强特性的FDTD数值仿真

 推导出了一种基于有损耗的Drude色散媒质模型的三维时域有限差分法（FDTD）.用该方法对金属亚波长圆形周期孔阵的透射增强特性进行了研究.数值仿真计算了金属板厚度、孔的大小、基底介质、孔中填充不同折射率的介质和孔阵的周期等对孔阵透射率的影响.数值计算结果表明,亚波长孔阵的透射系数随孔的变大而增大,随孔阵周期的变大而减小,在金属前后介质匹配时最大,孔中填充高折射率的介质可以增强透射能力.     

硅纳米线表面喷墨打印纳米银油墨的SERS性能研究

在金属辅助化学刻蚀法制备的硅纳米线表面,通过喷墨打印纳米银油墨制备了银纳米粒子/硅纳米线复合结构基底.通过调节刻蚀时间和刻蚀温度,探究硅纳米线的微观形貌变化,及其对基底表面增强拉曼散射(SERS)活性的影响.实验结果表明,硅纳米线的长度随着刻蚀时间的延长而增加.当刻蚀温度为40℃、刻蚀时间为8 min时,能够激发更强的SERS信号.银纳米粒子/硅纳米线对探针分子罗丹明6G的最低检测限为10^-7mol·L^-1.     

Silver nanowire ring resonator

We demonstrate a silver nanowire ring resonator with a ring diameter of 10.2 μm. The ring cavity is formed by coupling both ends of a 145-nm-diameter single silver nanowire into a closed loop. A Q-factor of 160 and a free spectral range of 10.6 nm are obtained for light centered around 800 nm. The self-coupled ring structure offers opportunities for realizing compact plasmonic resonators with tight confinement for hybrid optical and plasmonic signal processing.     

Programmable nanowire circuits for nanoprocessors

A nanoprocessor constructed from intrinsically nanometre-scale building blocks is an essential component for controlling memory, nanosensors and other functions proposed for nanosystems assembled from the bottom up. Important steps towards this goal over the past fifteen years include the realization of simple logic gates with individually assembled semiconductor nanowires and carbon nanotubes, but with only 16 devices or fewer and a single function for each circuit. Recently, logic circuits also have been demonstrated that use two or three elements of a one-dimensional memristor array, although such passive devices without gain are difficult to cascade. These circuits fall short of the requirements for a scalable, multifunctional nanoprocessor owing to challenges in materials, assembly and architecture on the nanoscale. Here we describe the design, fabrication and use of programmable and scalable logic tiles for nanoprocessors that surmount these hurdles. The tiles were built from programmable, non-volatile nanowire transistor arrays. Ge/Si core/shell nanowires coupled to designed dielectric shells yielded single-nanowire, non-volatile field-effect transistors (FETs) with uniform, programmable threshold voltages and the capability to drive cascaded elements. We developed an architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ～960 μm(2). The logic tile was programmed and operated first as a full adder with a maximal voltage gain of ten and input-output voltage matching. Then we showed that the same logic tile can be reprogrammed and used to demonstrate full-subtractor, multiplexer, demultiplexer and clocked D-latch functions. These results represent a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.     

Tunable nanowire nonlinear optical probe

One crucial challenge for subwavelength optics has been the development of a tunable source of coherent laser radiation for use in the physical, information and biological sciences that is stable at room temperature and physiological conditions. Current advanced near-field imaging techniques using fibre-optic scattering probes have already achieved spatial resolution down to the 20-nm range. Recently reported far-field approaches for optical microscopy, including stimulated emission depletion, structured illumination, and photoactivated localization microscopy, have enabled impressive, theoretically unlimited spatial resolution of fluorescent biomolecular complexes. Previous work with laser tweezers has suggested that optical traps could be used to create novel spatial probes and sensors. Inorganic nanowires have diameters substantially below the wavelength of visible light and have electronic and optical properties that make them ideal for subwavelength laser and imaging technology. Here we report the development of an electrode-free, continuously tunable coherent visible light source compatible with physiological environments, from individual potassium niobate (KNbO3) nanowires. These wires exhibit efficient second harmonic generation, and act as frequency converters, allowing the local synthesis of a wide range of colours via sum and difference frequency generation. We use this tunable nanometric light source to implement a novel form of subwavelength microscopy, in which an infrared laser is used to optically trap and scan a nanowire over a sample, suggesting a wide range of potential applications in physics, chemistry, materials science and biology.     

Epitaxial core-shell and core-multishell nanowire heterostructures

Semiconductor heterostructures with modulated composition and/or doping enable passivation of interfaces and the generation of devices with diverse functions. In this regard, the control of interfaces in nanoscale building blocks with high surface area will be increasingly important in the assembly of electronic and photonic devices. Core-shell heterostructures formed by the growth of crystalline overlayers on nanocrystals offer enhanced emission efficiency, important for various applications. Axial heterostructures have also been formed by a one-dimensional modulation of nanowire composition and doping. However, modulation of the radial composition and doping in nanowire structures has received much less attention than planar and nanocrystal systems. Here we synthesize silicon and germanium core-shell and multishell nanowire heterostructures using a chemical vapour deposition method applicable to a variety of nanoscale materials. Our investigations of the growth of boron-doped silicon shells on intrinsic silicon and silicon-silicon oxide core-shell nanowires indicate that homoepitaxy can be achieved at relatively low temperatures on clean silicon. We also demonstrate the possibility of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets drive hole injection into either germanium core or shell regions. Our synthesis of core-multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.     

溶剂热法制备ZnS纳米线束

采用单一前驱体溶剂热法,在聚乙烯吡咯烷酮(PVP)作表面活性剂条件下,成功合成了ZnS纳米线束.利用X射线衍射(XRD)、透射电子显微镜(TEM)、傅里叶红外变换吸收光谱及光致发光测试对样品的结构、形貌及物理性能进行了分析与表征.结果表明,所得产物为纯的六面体纤维锌矿ZnS纳米线束,直径在20~30 nm,长度为1.5~2.0μm,并对ZnS纳米线束的形成机理进行了探讨.     

Nanotechnology: high-speed integrated nanowire circuits

Macroelectronic circuits made on substrates of glass or plastic could one day make computing devices ubiquitous owing to their light weight, flexibility and low cost. But these substrates deform at high temperatures so, until now, only semiconductors such as organics and amorphous silicon could be used, leading to poor performance. Here we present the use of low-temperature processes to integrate high-performance multi-nanowire transistors into logical inverters and fast ring oscillators on glass substrates. As well as potentially enabling powerful electronics to permeate all aspects of modern life, this advance could find application in devices such as low-cost radio-frequency tags and fully integrated high-refresh-rate displays.     

Spin-orbit qubit in a semiconductor nanowire

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin-orbit interaction has proven promising for coherent spin rotations. Here we implement a spin-orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.     

模板法合成Ag纳米线阵列

以多孔阳极氧化铝为模板,用乙二醇作还原剂,将Ag 在模板的纳米孔道内还原并进行限域生长,制得了Ag纳米线.用X-射线衍射光谱(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)等检测手段对产物进行了表征,结果表明所得Ag纳米线具有面心立方晶体结构,纳米线阵列排列整齐,长度可达10μm,单体纳米线的直径约为60 nm,与所用模板的孔径相当.