基于全相位FFT三谱线校正的电网谐波与间谐波检测算法

电网谐波检测中,传统FFT算法存在的频谱泄露现象影响了检测的精度.为解决这一问题,分析和比较了全相位FFT算法与FFT算法之间的区别,将一种三谱线校正方法推广到精度更高的全相位FFT算法,并由此提出一种全相位FFT三谱线校正算法.该算法利用频谱峰值频点周围三根谱线信息构造频率偏移量修正公式,进而获得全相位FFT幅值和频率校正值,并利用全相位FFT的相位不变性直接获得信号相位.通过与FFT三谱线插值算法、全相位FFT双谱线校正算法和全相位FFT双谱线插值算法对比,结果表明该全相位算法具有更好的谐波和间谐波检测精度,并且抗白噪声能力更强.     

基于全相位谱线插值的电力谐波检测方法研究

传统基于FFT的谐波检测方法在非同步采样或非整周期截断情况下会产生严重的频谱泄漏,为抑制频谱泄漏对谐波检测精度的影响,提出基于全相位谱线插值的电力谐波检测新方法.该方法使用全相位谱实际频点附近的三根离散谱线获得频率和幅值校正量,并利用离散全相位谱峰值谱线相位即为对应的实际频率相位的特点,无需另加校正即可实现较高的相位精度.利用全相位谱旁谱线相对于主谱线按平方衰减的特性,并结合旁瓣衰减速度快的Nuttall四项五阶余弦窗,可有效抑制基于FFT谱线插值算法相邻谐波成分的相互干扰,提高谐波检测精度.通过与三谱线插值法和全相位时移相位差法的仿真对比实验,结果表明文中提出的算法具有更好的谐波检测精度.     

全相位时移相位差频谱校正法

为精确估计噪声背景下正弦信号频率、幅值、初始相位,提出了基于全相位FFT谱分析的时移相位差频谱校正法．此方法需对存在时移关系的两输入序列分别进行全相位FFT,直接取主谱线的相位值无需校正即可得到初始相位的估计;利用主谱线上的相位差值即可获得精确的频率估计．同时阐述了传统相位差法向全相位时移相位差法的衍生关系．由于全相位FFT具有良好的抑制频谱泄漏特性,因而该法的频率和相位估计精度非常高,无噪时频率误差处于10^12分辨率级,相位误差可达10^-9度．     

全相位算法在相控阵天线幅相校正测量中的应用

相控阵天线波束的精确指向对各阵元通道幅相一致性提出了很高的要求,在实际的相控阵天线系统中,各阵元通道幅度和相位不可能完全保持一致,需要对阵列通道幅相误差进行实时地监测和校正。阵列单元校正的本质是对通道幅相误差的精确测量或估计,在现有幅相测量方法的基础上,提出一种全相位时移相位差算法。该算法需对存在时移关系的两输入序列分别进行全相位FFT,直接取主谱线的相位值无需校正即可得到输入信号的中间点相位信息,利用两序列主谱线的相位差求解信号的幅度值。由于全相位FFT具有"相位不变性",此方法能够很好地抑制频谱泄漏。仿真结果表明,该方法可有效避免第一类相位差法在不同步采样时误差较大的情形,测量结果明显优于第一类相位差法。     

基于加窗插值FFT和原子分解的间谐波检测算法

间谐波除了具有谐波危害外,还具有其自身特性带来的电压闪变、继电器误动作等多种危害,因此准确检测间谐波对电网安全运行具有重要意义.在分析加窗插值FFT和原子分解算法优缺点的基础上,提出两种算法相结合的间谐波检测算法.算法首先对加Hanning窗信号进行FFT分析,求得峰值谱线及其两侧谱线值.然后根据幅值判断法判断是否存在谱线干涉.若存在谱线干涉,则使用原子分解算法估计信号参数;若不存在谱线干涉,则使用加窗插值FFT算法对信号参数进行检测.仿真结果表明,算法在检测谐波、间谐波时,频率分辨率高于加窗插值FFT算法,计算量小于原子分解算法.     

GNSS接收机抗干扰电路的硬件实现

针对全相位FFT/FFT(apFFT/FFT)综合相差法硬件资源和功耗大的问题,基于FFT算法求解最大峰值谱线位置仅与各谱线峰值相对大小有关的特点,提出一种用于减少FFT电路面积的阈值判断移位方法.首先对apFFT/FFT综合相差法与修正Rife算法进行性能比较;然后利用阈值判断移位方法对apFFT/FFT综合相差法硬件实现中的FFT运算结构进行改进,称为改进apFFT/FFT算法,使FFT计算位宽减少1/2;最后将改进的apFFT/FFT综合相差法硬件结构应用到GNSS抗干扰模块的电路实现中,并利用FPGA进行抗干扰功能验证.结果表明,在基本不降低频率估计精度下,改进apFFT/FFT算法可以减少约50％的面积资源和功耗;在接近相同面积资源和功耗下,改进apFFT/FFT算法的频率估计精度约为修正Rife算法的2倍;GNSS抗干扰硬件模块具备良好的滤除干扰能力.     

基于ITER测试平台的谐波—间谐波测量方法

为了解决传统FFT所存在的频谱泄露问题,将双谱线加窗插值FFT和全相位FFT两种方法对信号的谐波和间谐波进行分析,并将两者的分析结果进行比较。仿真结果表明,全相位FFT对于谐波和间谐波的相位分析相对于双谱线加窗插值FFT更加准确,幅度需要进行校正。     

基于Nuttall自卷积窗四谱线插值FFT的电力谐波分析方法

快速傅里叶变换(fast Fourier transform,FFT)在非同步采样条件下难以实现谐波的高精度检测,而加窗和插值算法可以提高谐波检测的准确度。文章在分析Nuttall自卷积窗频谱特性的基础上,提出了基于Nuttall自卷积窗四谱线插值FFT算法。该算法通过对加窗信号离散频点处幅值的分析,利用谐波频点附近的四根谱线进行加权运算,进一步提高谐波幅值、相位和频率检测的精度;采用多项式拟合的方式得到基于Nuttall自卷积窗四谱线插值修正公式。仿真数据表明,该算法具有较高的谐波检测精度,Nuttall自卷积窗有效地抑制了频谱泄露。     

基于谱序列变换的高精度谐波参数估计算法

基于高精度谐波分析是电力系统谐波污染治理的前提,由于频谱泄漏的影响,经典的谐波分析算法存在参数估计精度不高、计算复杂度较大等问题,为此,在分析信号谱线衰减特征的基础上,提出一种基于谱序列变换的高精度谐波参数分析算法。该算法通过对信号进行FFT运算得到谱序列并对其实施特定的加权变换,加速非真实频率处谱线的衰减速度,从而达到有效抑制频谱泄漏的目的,在此基础上推导谐波幅值和相位的计算公式。研究结果表明,与经典的加窗插值算法和FFT改进算法相比,所提出的算法所得谐波参数估计精度显著提高,且其在基波频率变化及间谐波条件下均表现出优良的估计性能;此外,与经典的加窗插值算法相比,新算法只需对谱序列进行简单处理,具有计算复杂度低的优点。     

几种FFT加窗三次样条插值的间谐波检测方法的比较

在非整周期采样的情况下,快速傅里叶变换(fast Fourier transform,FFT)存在较大的误差。文章通过在Matlab中对构造的信号模型进行仿真,比较了几种基于三次样条插值的加窗FFT算法的间谐波检测精度,并以Blackman-Harris窗三次样条插值FFT算法为例,对其进行了公式推导,得到了该算法信号频率、幅值和相位的计算公式。仿真结果表明,文中的几种基于三次样条插值的加窗FFT算法的间谐波检测精度较高,频率平均误差可达到0.02%以内,幅值平均误差可达到0.3%以内,有效地减小了非整周期采样对FFT的影响。     

基于电容电感移相单元的MEMS移相器

为减小基本结构开关线型微机电(MEMS)移相器的面积,提出了一种新型的基于电容电感移相单元的小型化3位开关线型MEMS移相器。该移相器用MEMS工艺制成的交叠结构的电容电感移相单元代替原始的延迟传输线,其90°移相单元的长度比传统90°延迟线的缩短近3/4,45°移相单元的长度比原始延迟线的缩短近1/2,有效缩小了移相器的整体面积。用HFSS(high frequency structuresimulator)软件进行了仿真及优化设计。仿真结果表明:在20GHz到40GHz频段内,45°移相单元的回波损耗优于-27.25dB,插入损耗优于-0.33dB;90°移相单元的回波损耗优于-26.25dB,插入损耗优于-0.51dB。在35GHz时,整个3位移相器能够完成0～360°、间隔为45°的移相,平均插入损耗为-2.63dB,回波损耗优于-15dB,平均相位误差为3.67°。根据仿真结果,所设计的MEMS移相器适用于35GHz小型化相控阵雷达。     

Atomic phase diagram

Based on the Thomas-Fermi-Dirac-Cheng model, atomic phase diagram or electron density versus atomic radius diagram describing the interaction properties of atoms of different kinds in equilibrium state is developed. Atomic phase diagram is established based on the two-atoms model. Besides atomic radius, electron density and continuity condition for electron density on interfaces between atoms, the lever law of atomic phase diagram involving other physical parameters is taken into account, such as the binding energy, for the sake of simplicity.     

Colloidal ordering from phase separation in a liquid-crystalline continuous phase

Some binary mixtures exist as a single phase at high temperatures and as two phases at lower temperatures; rapid cooling therefore induces phase separation that proceeds through the initial formation of small particles and subsequent growth and coarsening. In solid and liquid media, this process leads to growing particles with a range of sizes, which eventually separate to form a macroscopically distinct phase. Such behaviour is of particular interest in systems composed of an isotropic fluid and a liquid crystal, where the random distribution of liquid-crystal droplets in an isotropic polymer matrix may give rise to interesting electro-optical properties. Here we report that a binary mixture consisting of an isotropic fluid and a liquid crystal forming the continuous phase does not fully separate into two phases, but self-organizes into highly ordered arrays of monodisperse colloidal droplet chains. We find that the size and spatial organization of the droplets are controlled by the orientational elasticity of the liquid-crystal phase and the defects caused by droplets exceeding a critical size. We expect that our approach to forming monodisperse, spatially ordered droplets in liquid crystals will allow the controlled design of ordered composites that may have useful rheological and optical properties.     

调合石蜡的相平衡参数和相变动力学特性

使用正规溶液模型的Scatchard-Hildebrand方程对调合石蜡的熔点、浊点以及固-液和组元相变速率进行了计算.以切片石蜡作为被调合石蜡的计算结果表明,烷烃的相变温度和切片石蜡相近时,该烷烃对调合石蜡的熔点、浊点以及相变动力学特性影响较小.增加C22类轻质烷烃的质量分数,调合石蜡的熔点、浊点降低;熔程内较低温度下,轻质烷烃相变速率变慢,重质烷烃相变速率变快.增加C35类重质烷烃的质量分数,调合石蜡的浊点升高,熔点呈现复杂的变化,对C24以下烷烃的相变速率几乎没有影响,C25以上烷烃在熔程内较低温度下相变速率变慢.计算结果可以为相变储能中选用具有适当相变温度及相变动力学特性的调合石蜡提供指导.     

投影栅相位法三维检测的频域相对解相技术

为提高投影栅相位法在三维检测实际应用中的解相精度 ,分析了频谱混叠及移频方法的不准确对解相精度造成的影响 ,建立了一种新的频域相对解相技术。基于小波变换得到相对栅线图像 ,其频谱中背景成分基本消除 ,有利于有用频带的提取。同时 ,通过计算两幅图像的相对位相 ,避免了单幅图像移频方法所带来的系统误差。实例证明该技术改善了解相的精度和稳定性 ,提高了投影栅相位法的应用水平     

Coherent quantum phase slip

A hundred years after the discovery of superconductivity, one fundamental prediction of the theory, coherent quantum phase slip (CQPS), has not been observed. CQPS is a phenomenon exactly dual to the Josephson effect; whereas the latter is a coherent transfer of charges between superconducting leads, the former is a coherent transfer of vortices or fluxes across a superconducting wire. In contrast to previously reported observations of incoherent phase slip, CQPS has been only a subject of theoretical study. Its experimental demonstration is made difficult by quasiparticle dissipation due to gapless excitations in nanowires or in vortex cores. This difficulty might be overcome by using certain strongly disordered superconductors near the superconductor-insulator transition. Here we report direct observation of CQPS in a narrow segment of a superconducting loop made of strongly disordered indium oxide; the effect is made manifest through the superposition of quantum states with different numbers of flux quanta. As with the Josephson effect, our observation should lead to new applications in superconducting electronics and quantum metrology.     

Room-temperature electronic phase transitions in the continuous phase diagrams of perovskite manganites

Highly correlated electronic systems--such as transition-metal oxides that are doped Mott insulators--are complex systems which exhibit puzzling phenomena, including high-temperature superconductivity and colossal magnetoresistivity. Recent studies suggest that in such systems collective electronic phenomena are important, arising from long-range Coulomb interactions and magnetic effects. The qualitative behaviour of these systems is strongly dependent on charge filling (the level of doping) and the lattice constant. Here we report a time-efficient and systematic experimental approach for studying the phase diagrams of condensed-matter systems. It involves the continuous mapping of the physical properties of epitaxial thin films of perovskite manganites (a class of doped Mott insulator) as their composition is varied. We discover evidence that suggests the presence of phase boundaries of electronic origin at room temperature.