高响应率石墨烯-CsPbBr3量子点光电探测器

全无机金属卤化物钙钛矿材料CsPbX_3(X=Cl,Br,I)不仅有优异光电特性,还有比有机-无机杂化钙钛矿更好的热稳定性,在光电探测器领域有很大应用前景.但由于全无机钙钛矿材料自身迁移率较低,直接用于光电探测器其光响应率也很低,难以满足实际应用.以热注入法合成高质量的CsPbBr_3钙钛矿量子点材料,再将其与高迁移率的单层石墨烯薄膜相结合,构建出石墨烯-CsPbBr_3量子点复合光电探测器,光响应率高达3.5×10~4 A·W~(-1).研究表明引入石墨烯材料作为传输层后,CsPbBr_3量子点的光生电子空穴对得到有效分离并快速传输.两种材料界面处存在陷阱态,产生了光栅压效应,延长了载流子寿命.两种机制结合使复合光电探测器的光响应率大大提升.     

退火温度对ZnO薄膜晶体管电特性的影响

针对非晶硅和有机薄膜晶体管的低迁移率问题,以高纯Zn为靶材,反应磁控溅射沉积、且在不同温度下退火的ZnO薄膜作为半导体活性层,成功地制备出基于ZnO材料的薄膜晶体管(ZnO-TFT),研究了退火温度对ZnO -TFT电特性的影响.结果表明:ZnO- TFT的载流子迁移率随退火温度的升高而明显增大,700℃退火的样品迁移...     

石墨烯场效应晶体管的光响应特性研究

采用电子束曝光和剥离工艺制备石墨烯场效应晶体管, 并研究其光电响应特性。结果表明, 当激光光斑(波长为633 nm)照射在金属电极边缘的石墨烯沟道时, 可测得明显的光电流。背栅电压能够有效调制光电响应, 可以改变光电流的大小和方向。在背栅调控下, 光电流出现饱和现象, 石墨烯晶体管的光响应度最大达到46.5 μA /W,可用于构建基于石墨烯的新型光探测器。     

杂原子掺杂石墨烯的制备及其光电转换性能研究

报道一种在离子液体辅助条件下通过小分子热分解聚合法制备硼掺杂石墨烯和氮掺杂石墨烯的新方法.在对抽制备的石墨烯材料的形貌、光学性质、电学性质及半导体类型进行表征的基础上,进一步研究用电沉积方法组装的石墨烯光电极薄膜在光化学电池和固态光伏器件中的光电转换性能.实验结果表明,文中合成的掺杂石墨烯具有良好的光电转换性能,其中以硼掺杂石墨烯和氮掺杂石墨烯的复合薄膜最佳,其光电化学电池的光电流达到(4.69±0.05)×10~(-5)A/cm~2,其固体器件的光电流响应为(5.38±0.38)×10~(-6)A/cm~2.     

太阳电池中陷光材料和结构的研究

高效率太阳电池的获得是推动光伏产业得到进一步拓展的关键之一,如何充分利用太阳光,提高太阳电池的光谱吸收是提高电池效率的有效手段之一。透明导电窗口层材料作为薄膜太阳电池中的一层重要功能材料,其对太阳电池有源层的光吸收具有非常重要的作用。该研究前期围绕着如何拓宽太阳光的宽谱透过、高的绒度散射、以及长波长光的利用等方面进行了详细的研究,部分研究成果如下:(1)采用基于密度泛函理论的平面波赝势方法对W掺杂ZnO材料进行了理论分析,并采用磁控溅射技术进行了WZO薄膜的实验研究,理论与实验结果表明,W能够在ZnO中起到施主作用,获得n型半导体特性,同时能带简并效应使其光学带隙展宽;(2)研究了低成本超生喷雾技术制备ZnO工艺中In掺杂量对IZO薄膜特性影响的研究:In的掺入能有效提高ZnO薄膜的载流子迁移率,从而降低薄膜的电阻率,同时In的掺入具有抑制(002)晶面生长,促进(101)晶面生长的作用,使其具有良好的陷光效果;(3)通过优化ZnO缓冲层(buffer layer),有效地改善了LPCVD-ZnO:B的光电特性。结果表明:"富氧"的缓冲层有效地增加了ZnO:B-TCO的近红外区域透过率,使其更适应宽光谱薄膜太阳电池的发展要求;(4)提出了一类基于磁控溅射及LPCVD技术的具有复合陷光结构的ZnO前电极材料,并在叠层薄膜太阳电池中进行初步应用;(5)基于复合陷光结构的优势,采用磁控溅射技术,通过对沉积条件的有效控制以及后湿法腐蚀工艺的优化,获得了大坑、小坑兼有的高绒度的ZnO透明导电薄膜,将其应用于非晶硅/非晶硅锗/微晶硅三结电池中,初始效率达到了14.06%;(6)采用化学水浴法制备了PbS量子点材料,并对反应条件对样品的影响进行了系统的研究,确定了将PbS等IV-VI族化合物半导体量子点用于上转换器的具体技术途径。     

基于Pt电极的TiO2紫外探测器研究

针对宽禁带半导体紫外探测器响应不够灵敏和响应度偏低等问题,将具有高功函数的Pt电极引入TiO₂紫外探测器,采用溶胶凝胶法制备了纳米TiO₂薄膜。以金属Pt为电极,采用磁控溅射的方法,将Pt电极溅射在TiO₂纳米薄膜上,制作了MSM (Metal Semiconductor Metal)型紫外探测器件。在5 V偏压下,探测器的暗电流为4.5 nA,260 nm波长光照下的光电流为5.7 μA。在260 nm的紫外光照射下,探测器的响应度达到最大值,约为447A/W,与其他紫外探测器（200 A/W左右）的响应度均值相比有了很大的提升。最后,设计外围电路,制作出功能完整的紫外强度测试仪。实验表明,该探测器成功地解决了传统宽禁带半导体紫外探测器灵敏度及响应度偏低等问题。     

红外光激励的CNF复合微悬臂梁稳态响应特性

研究了红外光源激励下,以碳纳米管薄膜为吸光层的复合结构微悬臂梁的光热响应特性.建立了温度分布理论模型和光热挠曲理论模型,进而得到其一维温度分布与激光照射位置的关系.由光热挠曲模型,对碳纳米管薄膜的厚度进行了优化设计,最后计算得到微悬臂梁的挠曲量随激光功率线性增加,结果表明以碳纳米管薄膜作为吸光层的复合结构微悬臂梁使光热探测灵敏度提高了1.2倍.研究结果表明,该类碳纳米管薄膜为吸光层的复合结构微悬臂梁作为高灵敏度光热传感器的可能性.     

P型重掺杂硅薄膜及其在叠层电池隧道结中的应用

本文采用等离子体增强化学气相沉积(PECVD)方法沉积出不同掺杂浓度的硅薄膜.利用原子力显微镜(AFM),IR和Raman散射等手段对硅薄膜的微结构进行了研究.通过测试薄膜的暗电导和激活能,对硅薄膜的电学特性进行了分析.为提高隧道结的复合速率,在隧道结的N层、P层之间插入不同掺杂浓度的硅薄膜做复合层,并测试了隧道结的电流-电压特性和透光性.实验结果表明:随着掺杂气体比例R(B2H6/SiH4)的增加,硅薄膜逐渐由微晶硅转变为非晶硅,薄膜的微结构和电学特性随之改变.隧道结复合层的最佳掺杂气体比例R=0.04,在该条件下的薄膜是含有少量品粒的非晶硅.使用该复合层的隧道结具有阻抗小、接近欧姆接触、光吸收少等优点.     

ZnO欧姆电极制备与n-ZnO/p-Si异质结紫外光电特性

基于ZnO形成的机理,运用半导体能带理论,分析了金属和ZnO的欧姆接触和肖特基接触特性;在p-Si衬底上,采用直流及射频溅射获得掺Al的ZnO薄膜;用电子束蒸发In/Ag、In/Al、Ti/Au,微电子光刻工艺制作范德堡、传输线、梳状电极和n-ZnO/p-Si异质结UV增强光电探测器,并在200～500℃时,在氩气保护下制作合金样品,测量样品的I-V特性、电阻率、载流子浓度、异质PN结的UV光谱响应,以及对XPS结构组分进行分析等.测试结果表明,采用金属功函数低的In、Ti做中间导电层,并在400℃退火合金后,In/Ag、In/Al、Ti/Au与n-ZnO薄膜形成了良好的欧姆接触.     

一种具有平顶陡边响应的长波长光探测器

在PIN型光探测器的基础上制备了一种适用于波分复用系统的具有平顶陡边响应的长波长光探测器。利用低压金属有机化学气相沉积(LP-MOCVD)设备在GaAs衬底上二次外延生长了具有台阶结构的GaAs/AlGaAs滤波腔和InP基PIN光探测器。高质量的GaAs/InP异质外延采用了低温缓冲层生长工艺;具有台阶结构的Fabry-Pérot(F-P)滤波腔采用了纳米量级台阶的制备方法。通过理论计算优化了实现平顶陡边光谱响应特性的器件结构;并通过实验成功制备出了具有平顶陡边响应性能的光探测器,器件的工作波长位于1 549nm,峰值量子效率大于25%,0.5dB光谱响应线宽为3.9nm,3dB光谱响应线宽为4.2nm,响应速率达到17GHz。     

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics

We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.     

近红外波段硅基石墨烯电光调制器研究进展

 近红外波段的电光调制器是未来光信号处理和计算系统中的关键功能元器件,硅基石墨烯电光调制器在结构尺寸、调制速率、调制带宽及大规模片上集成等方面具有诸多潜在优点而引起人们的广泛关注和重视。本文介绍了石墨烯的光电特性及光调制机理,结合石墨烯在近红外波段电光调制器中的研究及应用,综述了国内外近红外波段硅基石墨烯电光调制器的研究进展,重点叙述了条形波导结构、谐振结构、纳米梁结构的电光调制器的工作原理及各器件的特性,展望了硅基石墨烯电光调制器的研究方向。     

Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

Carbon nanotube(CNT)films were grown on silicon wafers with and without a nickel layer(Si-CNT and Ni-CNT)via the pyrolysis of iron phthalocyanine.The nickel layer was prepared using the electroless plating method.To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission,emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source.For the peak values of the pulsed voltage,which were in the range between 1.62-1.66 MV(corresponding to electric field intensities between 11.57-11.85 V/μm),the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT.By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,the improvement in the emission stability can be easily quantified.The number of emission cycles necessary for the peak current to decay from 100%to 50%increased from~3 for Si-CNT to~11 for a Ni-CNT film.     

氧化锌/银双层膜负反馈阴极电极的制备及性能研究

提出了一种可显著改善碳纳米管(CNTs)场致发射性能的ZnO/Ag双层膜负反馈阴极电极的制备方法.在条形银电极上溅射沉积一定厚度的Zn膜,经热氧化和湿法刻蚀制备成ZnO/Ag双层膜电极.同单层的Ag或氧化铟锡电极相比,该电极不仅具有足够的负反馈电阻(限流电阻)阻止CNTs场发射中过流的发生,而且降低了条形阴极电极的线性电阻,确保了场发射的均匀性.当溅射沉积Zn膜的厚度从40 nm增到120 nm时,热氧化形成的ZnO由孤岛状的颗粒变为连续体的薄膜,ZnO/Ag双层膜电极的表面光洁度比单层的Ag电极有很大的提高,负反馈电阻层的电阻增大,负反馈的能力增强.CNTs薄膜阴极场发射特性曲线证明,ZnO/Ag双层膜电极能明显降低场发射电流的波动,有效提高器件的稳定性和寿命.     

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

Nowadays, one of the bottlenecks which hinder the development and application of carbon nanotube （CNT） nano device is that no pure semiconducting CNT （s-CNT） or metallic CNT （m-CNT） can be obtained, and for solving this problem scientists proposed some methods on preparation or separation, but all the results still should be detected and feedback to the process for further improving the preparation and separation methods. Thus, it is very important to measure and distinguish the electrical properties of CNT. For that, scientists proposed a method to measure CNT electrical properties based on DC elec- trostatic force microscope （EFM） mode, which distin- guishes m-CNT from s-CNT according to different scan line shape to CNT with different electrical properties. But, we discovered that the probe lift-up height will seriously affect the shape of the scan line, which makes this method not reliable in distinguishing m-CNT from s-CNT. In this paper, the authors deeply researched the influence of probe lift-up height and also gave corresponding theoretical analysis and explanation, which will greatly improve the method of detecting CNT electrical properties by EFM.     

Fabrication of double-walled carbon nanotube film/TiO2 nanotube array heterojunctions with length-dependent photoresponse for broad band photodetectors

A novel photodetector based on double-walled carbon nanotube (DWCNT) film/TiO₂ nanotube array (TNA) heterojunctions was fabricated, which exhibited high photoresponse in a broad spectral range. The photoresponse of the detector was dramatically dependent on the length of the TNAs. High photocurrent-to-dark current ratio with a value of 3360 was observed in the visible range by optimizing the lengths of the TNAs. The photosensitive regions could be extended into the near-infrared range. These results reveal that DWCNT film/TNA heterojunctions show potential applications for broad band photodetectors.     

Piezoresistive effect in carbon nanotube films

The piezoresistive effect of the pristine carbon nanotube(CNT)films has been studied.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The piezoresistive effect in the pristine CNT films was studied by a three-point bending test.The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature,and increased with temperature,exceeding that of polycrystalline silicon(30at)30℃.The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.     

High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

Ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) have been fabricated by contacting semiconducting single-walled CNTs (SWCNTs) using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor (MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs. Together with the demonstration of ballistic p-type CNT FETs using Pd contacts, this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter was demonstrated, which had a voltage gain of over 160. Two adjacent n- and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons (3000 cm² V^?1 s^?1) and holes (3300 cm² V^?1 s^?1). The CNT FETs also had excellent potential for high-frequency applications, such as a high-performance frequency doubler.     

Span60在石墨烯润滑油中分子行为及协同作用

石墨烯常被使用在润滑油中,以此提高油的润滑性能,但其在油中极易发生团聚,需要借助分散剂抑制团聚。石墨烯、分散剂及润滑油间分子行为可揭示分散机理、润滑机理及协同作用。本文采用对环境无毒无害的span60作为分散剂,基于分子动力学研究石墨烯润滑油添加span60前后的润滑性能变化,建立氮化硅-润滑油-轴承钢层结构模型,分析span60/石墨烯的含量比、工作温度、压强以及剪切速度等因素对润滑油膜在摩擦副表面吸附能、剪切应力以及形成的类固膜厚度的影响,并通过实验进行验证。分散剂span60与石墨烯在润滑油中起到协同效应,提高了润滑油在Si3N4-GCr15摩擦副表面的润滑能力。当span60/石墨烯含量比为7:1时,润滑效果最好;温度为373 K、压强为102 MPa、剪切速度为25 m?s-1时,润滑油润滑性能最好。添加适量span60可以有效解决石墨烯在润滑油中的团聚问题。石墨烯、分散剂及润滑油间的协同效应受温度、压强及速度的影响。