Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

GaN has been considered to be the most promising optoelectronic material for such applications as light emitting diodes (LEDs), laser diodes (LDs) as well as high power electronic devices, due to its large direct energy band gap of 3.39 eV at room tempera…     

Hydrothermal synthesis and photoluminescence behavior of CeO<Subscript>2</Subscript> nanowires with the aid of surfactant PVP

Well-crystalline CeO₂ nanowires were prepared via a surfactant-assisted hydrothermal process. Reaction temperature and reaction time were changed for the determination of optimal synthesis parameters. The as-obtained products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and field emission scanning electron microscopy (FESEM). The results show that single crystal CeO₂ nanowires with high yield and good uniformity can be obtained hydrothermally at 180°C for 12 h with the aid of 2.0 g surfactant (polyvinyl pyrrolidone, PVP). The role of PVP was then discussed and a possible growth mechanism was proposed. Moreover, room temperature photoluminescence (PL) spectra were obtained for these CeO₂ nanowires, which are believed to be related to the abundant defects in these nanostructures.     

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.     

Mn掺杂GaN纳米条的制备和性质的研究

通过在1000℃下氨化锰掺杂Ga2O3薄膜制备了大量GaMnN纳米条。采用此法得到的剑状Mn掺杂GaN纳米条是六方纤锌矿结构,Mn的原子百分比是5.43%,纳米条的厚度大约为100 nm,宽度为200~400nm。X射线衍射(XRD)、扫描电镜(SEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)、选区电子衍射(SAED)、X射线光电子能谱(XPS)和荧光分光光度计(PL)用于表征所制备纳米条形貌及光学性质。室温下以325 nm波长的光激发样品表面,发现由于Mn的掺杂使GaN的发光峰有较大的红移。最后,简单讨论了GaN纳米条的生长机制。     

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.     

Soft chemical synthesis and luminescence properties of red long-lasting phosphors Y2O2S:Sm3+

Sm³⁺-activated Y₂O₂S red phosphors were prepared by the combustion method and microemulsion method at the first time. X-ray characterization and electron diffraction show that, Y₂O₂S:Sm³⁺, Ti⁴⁺, Mg²⁺ samples prepared by these two methods are pure hexagonal crystals in structure with a trivial change due to dopants. Scanning electron microscopy (SEM) results show that the product presents an almond-like sheet in uniform size. Under the excitation of 269 nm ultraviolet light, Y₂O₂S:Sm³⁺ samples fabricated by these two methods exhibit three main groups of red emission lines located at 564, 604, and 656 nm, respectively, which are attributed to the transitions of 4G_5/2 →6H_5/2, 4G_5/2 →6H_7/2, 4G_5/2 →6H_9/2, respectively. The samples prepared by microemulsion are seven times higher in fluorescent emission intensity and half time longer in afterglow time than that prepared by combustion.     

上转换材料NaYF4∶Er3+,Yb3+纳米晶的制备

采用溶胶 凝胶法合成NaYF₄∶Er³⁺,Yb³⁺纳米晶. 在980 nm红外激光照射下, 肉眼可观察到明亮的上转换发光; X射线粉末衍射（XRD）结果表明, 该纳米晶属于立方晶体结构; 透射电镜（TEM）照片显示, 晶粒为圆球形, 分散性好, 平均尺寸为70 nm, 符合生物标记过程中对材料的要求. 用荧光光谱仪记录了该上转换光谱, 并对发光机理进行了探讨.     

In_2O_3纳米材料的制备及其光学特性研究

采用活性炭直接还原In2O3粉末的热蒸发法,制得大量直径约40～300 nm的In2O3纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、EDS能谱仪和透射电子显微镜(TEM)对其表面形貌、结构和成分进行分析,结果表明所得纳米线为In2O3.用荧光光谱仪研究其发光特性,得知所得产物在室温下存在较强的蓝绿发光和紫外发光现象,同时结合实验条件对合成In2O3纳米线的生长机理和光致发光机制进行初步讨论.     

Photoluminescence and cathodoluminescence properties of CaLaGa<Subscript>3</Subscript>O<Subscript>7</Subscript>:Eu<Superscript>3+</Superscript> phosphors

The CaLaGa₃O₇:Eu³⁺ phosphor was prepared by a chemical co-precipitation method. Field emission scanning electron microscopy (FE-SEM), laser particle size analysis, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphor. The results revealed that the phosphor was composed of microspheres with a slight agglomerate phenomenon and was spherically shaped. The average grain size was about 1.0 μm. Eu³⁺ ions, as luminescent centers, substituted La³⁺ ions into the single crystal lattice of CaLaGa₃O₇ with the sites of C_s. Although the CL spectrum was greatly different from the PL spectrum, it had the strongest red emission corresponding to the ⁵D₀ →⁷F₂ transition of Eu³⁺. Under the excitation of UV light (287 nm) and electron beams (1.0–7.0 kV), the chromaticity coordinates of the phosphor were found to be in the nearly red and orange light regions, respectively.     

Fabrication and structural characterization of large-scale uniform SnO<Subscript>2</Subscript> nanotube arrays by sol-gel method

Semiconductor SnO2 nanotube arrays were fabricated by sol-gel method based on highly ordered nanoporous anodic alumina membrane. Their microstructures were characterized by scanning electron microscopy,transmission electron microscopy, selective electron diffraction spectroscopy and X-ray diffraction. Results indicated that SnO2 nanotubes have a thickness of about 20-30 nm,and a diameter of about 100-200 nm. The length of the nanotubes is about 1 μn, XRD and SEDS indicated that these SnO2 nanotubes are polycrystalline.     

ZnS和C60纳米线阵列的构筑和表征

以多孔氧化铝为模板,通过水热反应制备出ZnS 和 C₆₀纳米线阵列,分别用透射电子显微镜(TEM)、扫描电子显微镜(SEM)、X射线衍射(XRD)、拉曼光谱以及选区电子衍射图谱(SAED)等,对纳米线阵列形貌和化学成分进行表征.结果表明,ZnS 和C₆₀纳米线均为有序阵列.ZnS纳米线为多晶结构,在波长332 nm紫外光激发下, 发射519 nm特征荧光.同时介绍了水热条件下,在多孔氧化铝模板中填充目的产物,以及制备纳米线有序阵列的相关过程.该方法具有一定的普适性.     

9,10-二(3,5-二氟苯乙烯基)蒽有机纳米线的制备与性质表征

利用再沉淀法制备9,10-二(3,5-二氟苯乙烯基)蒽(TFDSA)有机纳米线,并通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光光谱(PL)表征所制备的纳米线.结果表明:纳米线表面光滑,长度为20~30μm,宽度为400nm,具有较强的绿色荧光发射,发光峰位于538nm处;将单根TFDSA纳米线作为有源波导可在亚微米量级进行光传播.     

Photoluminescence and cathodoluminescence properties of a novel CaLaGa307：Dy3＋ phosphor

A single host white emitting phosphor, CaLaGa3O7:Dy3+, was synthesized by chemical co-precipitation. Field emission scanning electron microscopy, X-ray diffraction, laser particle size analysis, and photoluminescence and cathodoluminescence spectra were used to investigate the structural and optical properties of the phosphor. The phosphor particles were composed of microspheres with a slight tendency to agglomerate, and an average diameter was of about 1.0 μm. The Dy3+ ions acted as luminescent centers, and substituted La3+ ions in the single crystal lattice of CaLaGa3O7 where they were located in Cs sites. Under excitation with ultraviolet light and a low voltage electron beam, the CaLaGa3O7:Dy3+ phosphor exhibited the characteristic emission of Dy3+ (4F9/2-6H15/2 and 4F9/2-6H13/2 transitions) with intense yellow emission at about 573 nm. The chromaticity coordinates for the phosphor were in the white region. The relevant luminescence mechanisms of the phosphor are investigated. This phosphor may be applied in both field emission displays and white light-emitting diodes.     

Fabrication and characterization of crystalline copper nanowires by electrochemical deposition inside anodic alumina template

Copper nanowires were fabricated by electrochemical deposition inside anodic alumina template anodized on aluminum substrate. The morphology, composition and structure of the copper nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive (EDS) and X-ray diffraction spectroscopy (XRD). The results revealed that copper nanowires were dense, continuous, highly-crystalline and uniform with diameters. The electrical properties of copper nanowires wrer characterized with two-terminal electrical measurements. Different current-voltage (I-V) characteristics of single copper nanowire were observed and possible conductive mechanisms were discussed. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits.     

Structural,morphological, and optical properties of tin(IV) oxide nanoparticles synthesized using <Emphasis Type="Italic">Camellia sinensis</Emphasis> extract: a green approach

Tin oxide (SnO₂) nanoparticles were cost-effectively synthesized using nontoxic chemicals and green tea (Camellia sinensis) extract via a green synthesis method. The structural properties of the obtained nanoparticles were studied using X-ray diffraction, which indicated that the crystallite size was less than 20 nm. The particle size and morphology of the nanoparticles were analyzed using scanning electron microscopy and transmission electron microscopy. The morphological analysis revealed agglomerated spherical nanoparticles with sizes varying from 5 to 30 nm. The optical properties of the nanoparticles' band gap were characterized using diffuse reflectance spectroscopy. The band gap was found to decrease with increasing annealing temperature. The O vacancy defects were analyzed using photoluminescence spectroscopy. The increase in the crystallite size, decreasing band gap, and the increasing intensities of the UV and visible emission peaks indicated that the green-synthesized SnO₂ may play future important roles in catalysis and optoelectronic devices.     

热蒸发法制备TeO_2纳米线的生长机理

以金属碲粉为原料,在450℃下采用热蒸发法在镀金玻璃基板上成功合成TeO_2纳米线,利用X射线衍射、扫描电子显微镜、透射电子显微镜对TeO_2纳米线的结构和形貌进行表征,并对其生长机理进行探讨.研究结果表明,具有四方相晶体结构的TeO_2纳米线直径在70~200 nm之间,长度在几百微米至2 mm.通过对不同生长时间所获得产物的形貌观察,对TeO_2纳米线的生长过程进行了分析,推断TeO_2纳米线是通过气-固机制进行生长,镀金薄膜可能只是起到诱导和加速TeO_2纳米线生长的作用.     

上转换材料复合介孔TiO2晶须的可见光催化性能

用溶胶凝胶法制备上转换发光材料Y3Al5O12:Er。反射光谱、发射光谱表明:Y3Al5O12:Er在480 nm光的激发下,产生2个<387 nm的紫外光发射峰。将上转换材料介孔TiO2晶须复合成可见光催化剂,采用X线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)以及低温N2吸附-脱附(BET)等对催化剂进行表征,通过光催化降解亚甲基蓝(MB),对催化剂的活性进行测试。结果表明:复合上转换材料的介孔TiO2晶须在可见光下能够有效降解MB,10%Y3Al5O12:Er的介孔TiO2晶须的MB降解率为73%。     

Synthesis and Optical Property Study on ZnO Nanostructures Via Vapor Phase Growth

Nanostructural zinc oxide films have been synthesized via vapor phase growth by heating pure zinc powder. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) results showed that four kinds of morphologies ZnO nanostructures namely nanowires, well-aligned nanorods, nanofeathers and hexagonal nanorods were formed and all of wurtzite structural crystals. The results indicated that the temperature and substrate play an important role in the formation of different morphologies of ZnO nanostructures. The photoluminescence (PL) measurement was carried out for the wellaligned nanorods ZnO sample and blue emission peaks at 420 and 444 nm have been observed at room temperature. And the blue emission mechanism is discussed.     

Catalytic self-assembly preparation and characterization of carbon nitride nano-tubes by a solvothermal method

A solvothermal reaction of anhydrous CaNaCl3 and sodium using cyclohexane as solvent and NiCI2 as catalyst precursor has been carried out to prepare carbon nitride nanotubes successfully at 230℃ and 1.8 MPa. The carbon nitride nanotubes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction (ED), electron energy loss spectrum (EELS) and Raman spectrum.SEM and TEM results indicated that the tubes have a length of 20-30 μm, a uniform outer diameter of about 50-60 nm,an inner diameter of 30-40 nm and are highly ordered assembled as bundles. The EELS measurement indicated that the ratio of N/C was about 1.00. The ED and XRD analyses revealed that the tube may have a new CN crystalline structure. The growth mechanism of nanotubes was discussed.     

花棒状ZnO单晶体的生长与表征

采用表面活性剂协助自组装法合成了花棒状ZnO,利用X射线衍射、扫描电镜、红外光谱和荧光光谱对该化合物的晶体结构、样品形貌、振动光谱以及发射光谱进行了表征.结果表明:ZnO在表面活性剂的存在下,形成纤锌矿型的六方结构,晶体的生长是沿c轴[001]方向定向生长,并且聚集在某一中心的晶核向三维方向定向生长形成花状形貌.该ZnO晶体的晶胞参数为a=0.324 85(6)nm,c=0.520 43(8)nm,γ=120°.在测量波长范围内ZnO的发射光谱在315,400,473和560 nm左右出现荧光,这些发射光谱的波长位置不随激发光波长的增长而变化,而散射光谱峰的波长位置随激发光的波长增加而增加.