高速半导体激光器超短光脉冲产生及脉宽测试

报道了利用增压开关半导体激光器产生超短光脉冲的实验结果，研制了适合测量半导体激光器超短光脉冲宽度的强度自相关测试系统，测得其脉宽为４０ｐｓ。     

适于测量波长1.3μm的超短光脉冲的强度自相关系统

本文介绍了一种适于测量半导体激光器产生的波长1.3μm的超短光脉冲的强度自相关系统的原理和装置。对波长1.3μm的InGaAsP/InP激光器产生的超短光脉冲的测量结果表明,该装置具有很高的分辨率和较高的灵敏度。     

短光脉冲的谐波测量法

本文讨论了超短光脉冲测量的二次谐波法(SHG)、半导体表面反射频法和高次谐波法。用 SHG 法对调 Q 加模 Nd:YAG 激光器的光脉冲进行了测量。     

一种大功率超短脉冲激光器的设计

设计了一种新型大功率超短脉冲激光器,将两种传统产生超短脉冲的方法(调Q和锁模)有效的结合起来,并对激光器的各个环节的设计作了说明。为了获得更大的功率采用了电光"腔倒空"直腔调Q法和LDA侧面泵浦,为了获得脉宽更窄的超短脉冲采用了半导体可饱和吸收镜(SESAM)锁模技术。     

脉宽2.9 PS的超短被动锁模半导体激光器

本文报道了一种新型的被动锁模半导体激光器,采用了多量子阱技术、主被动混合锁模机制,并且在实验中已经成功产生了脉宽为2.9 ps,时间带宽积为0.43(非常接近高斯波形的变换极限值)的超短光脉冲,是光时分复用系统的一种理想光源.     

产生1．3μm超短光脉冲的增益开关LD实验系统

分析了半导体激光器（ＬＤ）增益开关的理论特性。直接调制１．３μｍ国产双异质结ＩｎＧａＡｓ激光器得到重复频率为１．１ＧＨｚ，脉宽为２５～５０ｐｓ的超短光脉冲。     

光克尔效应调制器在产生超短脉冲激光中的应用

本文概述了光克尔效应调制器(OKEM)在产生超短脉冲激光中的应用,并论证了它的有意义的发展。光克尔效应是一种非线性光学效应,是一种很强的平面偏振光通过各向异性介电物质时产生的折射率变化的效应。这种变化与光波电扬的平方成正比。光通过克尔介质时的自相位调制产生了强的啁啾,从而得到宽的锁模频谱及窄的脉宽。OKEM在产生超短脉冲激光及压缩脉冲方面有许多重要的应用。具有OKEM的超短脉冲激光器具有如下重要特点:①技术很简便。②装置具有长期和短期的稳定性及脉冲的再现性。③能容易改变锁模激光器的输出参数。④适用于任意高功率激光器。如果把OKEM与主动调制器或Q开关(采用予激光技术)相结合,那末它将更具有生命力。理论和实验都证明,由光克尔系数大及弛豫时间短的克尔介质(如CS_2)组成的OKEM是一种实用的且有前途的装置。进一步的理论及实验研究正在进行中。     

增益开关分布反馈半导体激光器输出特性的研究

讨论了采用增益开关技术在分布反馈半导体激光器上产生超短光脉冲的特性。理论分析表明，光脉冲特仅与峰值反转率ｒ有关，峰值功率随ｒ升高而升高，脉宽随ｒ升高而降低。     

超高速锁模半导体激光器光谱蓝移现象研究

本文对一种新型输出波长1.55μm、超高速10 GHz、多量子阱、锁模半导体激光器的自发辐射光谱的蓝移现象进行实验研究,得到随着对锁模半导体激光器增益区施加增益电流的增加(5 mA→70 mA),多量子阱半导体激光器自发辐射光谱存在明显的蓝移现象(1.550μm→1.500μm),以及输出中心波长向短波长方向移动50 nm的实验结果,这对深刻理解和实现光时分复用技术中高质量超短相干脉冲光源具有重要意义.     

激光器锁模机理综述

本文简要地讨论了激光器锁模的理论依据,频域里激光器的锁模机理和理论分析以及时域里超短光脉冲产生的起伏机理和理论分析,并且提出一个脉动调制锁模的机理概念,以期达到对激光器的锁模能有较明确的认识。     

半导体激光器短电脉冲调制光脉冲的产生与控制

对半导体激光器短电脉冲调制增益开关法产生皮秒光脉冲动力学过程进行理论分析和实验研究 .基于单模数率方程 ,采用相图 ( Phase Portraits)法分析激光器激射皮秒光脉冲时载流子浓度和光子密度变化的对应关系 .探讨直流参数、调制脉冲参数和器件寄生参量等对产生皮秒光脉冲的影响 .在此基础上 ,研究 In Ga As P/ In P激光器短电脉冲调制产生单发激光脉冲最佳的实验条件     

A GaAs polariton light-emitting diode operating near room temperature

The increasing ability to control light-matter interactions at the nanometre scale has improved the performance of semiconductor lasers in the past decade. The ultimate optimization is realized in semiconductor microcavities, in which strong coupling between quantum-well excitons and cavity photons gives rise to hybrid half-light/half-matter polariton quasiparticles. The unique properties of polaritons-such as stimulated scattering, parametric amplification, lasing, condensation and superfluidity-are believed to provide the basis for a new generation of polariton emitters and semiconductor lasers. Until now, polariton lasing and nonlinearities have only been demonstrated in optical experiments, which have shown the potential to reduce lasing thresholds by two orders of magnitude compared to conventional semiconductor lasers. Here we report an experimental realization of an electrically pumped semiconductor polariton light-emitting device, which emits directly from polariton states at a temperature of 235 K. Polariton electroluminescence data reveal characteristic anticrossing between exciton and cavity modes, a clear signature of the strong coupling regime. These findings represent a substantial step towards the realization of ultra-efficient polaritonic devices with unprecedented characteristics.     

非辐射复合对微腔半导体激光器自发发射寿命调制特性的影响

考虑非辐射复合,采用小信号近似方法分析了微腔半导体激光器的自发发射寿命调制。数值模拟结果表明 ,非辐射复合对微腔半导体激光器自发发射寿命调制的调制带宽有一定影响,它可使特定注入电流下的共振峰消除,但由于耗散导致强度响应减弱     

Recent developments in compact ultrafast lasers

Ultrafast lasers, which generate optical pulses in the picosecond and femtosecond range, have progressed over the past decade from complicated and specialized laboratory systems to compact, reliable instruments. Semiconductor lasers for optical pumping and fast optical saturable absorbers, based on either semiconductor devices or the optical nonlinear Kerr effect, have dramatically improved these lasers and opened up new frontiers for applications with extremely short temporal resolution (much smaller than 10 fs), extremely high peak optical intensities (greater than 10 TW/cm2) and extremely fast pulse repetition rates (greater than 100 GHz).     

Raman injection laser

Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident radiation by an amount corresponding to the frequency of an internal oscillation of the material. This effect is the basis for a broad class of tunable sources known as Raman lasers. In general, these sources have only small gain (approximately 10(-9) cm W(-1)) and therefore require external pumping with powerful lasers, which limits their applications. Here we report the realization of a semiconductor injection Raman laser designed to circumvent these limitations. The physics underlying our device differs in a fundamental way from existing Raman lasers: it is based on triply resonant stimulated Raman scattering between quantum-confined states within the active region of a quantum cascade laser that serves as an internal optical pump--the device is driven electrically and no external laser pump is required. This leads to an enhancement of orders of magnitude in the Raman gain, high conversion efficiency and low threshold. Our lasers combine the advantages of nonlinear optical devices and of semiconductor injection lasers, and could lead to a new class of compact and wavelength-agile mid-and far-infrared light sources.     

有源区体积对微腔半导体激光器电流调制带宽的影响

主要讨论了微腔半导体激光器电流调制带宽随有源区体积的变化规律.数值模拟结果表明:当自发发射因子较大时,对于不同的有源区体积,电流调制带宽显著不同.同等参数下,适当选择有源区体积,可使电流调制带宽提高2～3个数量级.     

一种基于保偏光纤干涉结构的稳定光谱测量方法

本文提出一种用于光谱测量的保偏光纤干涉结构.该结构基于保偏光纤、法拉第旋转镜、偏振分束器和保偏光环形器等光纤器件的.结构中采用的压电陶瓷光纤相位调制器,使干涉工作在光程线性调制区域,以减小压电陶瓷非线性光程调制产生的误差.结构中的法拉第旋转镜、保偏光纤及保偏光器件的结合使用保证了传输光的偏振稳定性,消除偏振衰落效应的影响,保证了稳定的光谱测量结果.实验测试了SLD光谱,测得结果和光谱仪测得结果一致,结果表明该系统测量光谱的稳定性.该系统可用于提供光纤传感器和通信应用中常用光源(如二极管激光器、LED和半导体激光器等)的光谱分析.     

用于超快激光器碳纳米饱和吸收体的研究进展

碳纳米管及石墨烯饱和吸收体与目前广泛使用的锁模器相比,具有强饱和吸收、超快恢复时间、宽带宽、高光损伤阈值、易制作以及与光纤和纳米器件兼容等优点.对用于超短脉冲激光器的碳纳米管及石墨烯饱和吸收体的制作方法进行综述,针对目前存在的问题,指出了其发展方向.     

外部光反馈对半导体激光器混沌同步系统同步性能的影响

采用单向耦合光反馈半导体激光器混沌同步系统,对外部光反馈对系统实现同步的情况进行了比较,并进一步分析了不同反馈下激光器的参数失配对同步性能的影响.研究表明:光反馈半导体激光器混沌同步系统只在两个反馈区域可以实现完全(超前)同步,且在较强反馈区域实现的同步具有对参数失配更加敏感的特点;另外,当接收端处于强注入锁定的状态下,随着反馈系数的变化,系统会出现由广义同步向完全同步的切换,这会为一种新的混沌键控通信方案提供参考.