Formation of interfacial Al-Ce-Cu-W amorphous layers in aluminum matrix composite through thermally driven solid-state amorphization

Interfacial Al-Ce-Cu-W amorphous layers formed through thermally driven solid-state amorphization within the(W+Ce O2)/2024 Al composite were investigated. The elemental distributions and interfacial microstructures were examined with an electron probe microanalyzer and a high-resolution transmission electron microscope, respectively. The consolidation of composites consisted of two thermal processes: vacuum degassing(VD) and hot isostatic pressing(HIP). During consolidation, not only the three major elements(Al, W,and Ce) but also the alloying elements(Mg and Cu) in the Al matrix contributed to amorphization. At VD and HIP temperatures of 723 K and763 K, interfacial amorphous layers were formed within the composite. Three diffusion processes were necessary for interfacial amorphization:(a) long-range diffusion of Mg from the Al matrix to the interfaces during VD;(b) long-range diffusion of Cu from the Al matrix to the interfaces during HIP;(c) short-range diffusion of W toward the Al matrix during HIP. The newly formed interfacial Al-Ce-Cu-W amorphous layers can be categorized under the Al-Ce-TM(TM: transition metals) amorphous system.     

具芳纶短纤维增韧界面的碳纤维夹芯结构性能、机理和分析

碳纤维夹芯结构常用作航空航天、交通车辆等运载工具的主承力结构,这类结构在服役过程中容易发生界面开裂,继而引发大面积脱粘、面板局部屈曲等破坏模式,严重影响结构的安全.使用芳纶短纤维对碳纤维夹芯结构的面-芯界面进行增韧,在夹芯结构制备过程中,在界面加入低密度芳纶短纤维薄膜,通过芳纶短纤维的桥联作用,提高界面的粘接性能.首先通过弯曲和压缩实验,对比了增韧和未增韧夹芯结构的荷载-位移曲线、破坏模式等响应,发现芳纶短纤维界面增韧可以大幅提高碳纤维夹芯结构的各项力学性能.其次,基于非对称双悬臂梁实验和扫描电镜观测,分析了芳纶短纤维的增韧效果和增韧机理.最后,基于均匀弹性材料裂纹的奇异性解和界面裂纹尖端的位移震荡解,建立了考虑界面裂纹尖端复杂应力场的扩展有限元单元,模拟了碳纤维夹芯试件的界面开裂过程.以上研究工作有助于揭示芳纶短纤维增韧界面的断裂机理,建立界面增韧参数设计方法,提高碳纤维夹芯结构的力学性能,并为结构的健康诊断和工艺改进提供科学依据.     

Formation of thermally stable alkylidene layers on a catalytically active surface

Materials containing organic-inorganic interfaces usually display a combination of molecular and solid-state properties, which are of interest for applications ranging from chemical sensing to microelectronics and catalysis. Thiols--organic compounds carrying a SH group--are widely used to anchor organic layers to gold surfaces, because gold is catalytically sufficiently active to replace relatively weak S-H bonds with Au-S bonds, yet too inert to attack C-C and C-H bonds in the organic layer. But although several methods of functionalizing the surfaces of semiconductors, oxides and metals are known, it remains difficult to attach a wide range of more complex organic species. Organic layers could, in principle, be formed on the surfaces of metals that are capable of inserting into strong bonds, but such surfaces catalyse the decomposition of organic layers at temperatures above 400 to 600 K, through progressive C-H and C-C bond breaking. Here we report that cycloketones adsorbed on molybdenum carbide, a material known to catalyse a variety of hydrocarbon conversion reactions, transform into surface-bound alkylidenes stable to above 900 K. We expect that this chemistry can be used to create a wide range of exceptionally stable organic layers on molybdenum carbide.     

碳纳米管光伏器件的研究进展

碳纳米管（CNT）具有优异的电学特性和独特的一维纳米结构，是制作光伏器件的良好材料.文中介绍了单根/多根CNT光伏器件、CNT薄膜光伏器件、CNT 有机光伏器件、杯状叠层CNT光伏器件等典型CNT光伏器件，并阐述了这些CNT光伏器件的结构及特性，分析了CNT在器件中的作用.     

Epitaxial core-shell and core-multishell nanowire heterostructures

Semiconductor heterostructures with modulated composition and/or doping enable passivation of interfaces and the generation of devices with diverse functions. In this regard, the control of interfaces in nanoscale building blocks with high surface area will be increasingly important in the assembly of electronic and photonic devices. Core-shell heterostructures formed by the growth of crystalline overlayers on nanocrystals offer enhanced emission efficiency, important for various applications. Axial heterostructures have also been formed by a one-dimensional modulation of nanowire composition and doping. However, modulation of the radial composition and doping in nanowire structures has received much less attention than planar and nanocrystal systems. Here we synthesize silicon and germanium core-shell and multishell nanowire heterostructures using a chemical vapour deposition method applicable to a variety of nanoscale materials. Our investigations of the growth of boron-doped silicon shells on intrinsic silicon and silicon-silicon oxide core-shell nanowires indicate that homoepitaxy can be achieved at relatively low temperatures on clean silicon. We also demonstrate the possibility of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets drive hole injection into either germanium core or shell regions. Our synthesis of core-multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.     

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored-but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO(2) substrates. As a parallel with silicon-on-insulator (SOI) technology, we use 'XOI' to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO(x) layer (~1?nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6?mS?μm(-1) at a drain-source voltage of 0.5?V, with an on/off current ratio of greater than 10,000.     

LaNi4.25Al0.75储氢合金的改性

为了提高LaNi4．25Al0．75合金的储氢性能,采用退火、表面镀铜和表面包覆SiO2对合金进行改性,并对处理前、后合金的微观结构和吸放氢性能的变化进行研究。研究结果表明,退火消除了LaNi4．25Al0．75合金中的偏析,减少了内应力,使合金具有平坦的吸氢平台;表面镀铜处理加快了合金的吸、放氢速度,但吸氢含量略有降低,另外,镀铜合金抗粉化性能加强,经10次吸、放氢循环后没有出现粉化现象;表面包覆SiO2前、后,合金的吸氢量变化不大,抗粉化性能加强,经10次吸、放氢循环后没有出现粉化现象。     

铜/铝异步轧制复合带的界面反应与强化机制

采用同步和异步轧制复合工艺制备铜/铝复合带,研究退火过程中的界面反应和异步轧制工艺的强化机制.利用扫描电镜观察界面微观组织和拉伸断口形貌,通过线扫描和电子探针分析界面元素分布,采用XRD进行界面物相分析,通过剥离和拉伸实验研究复合带的力学性能.结果表明,经400℃保温1h后界面形成具有三个亚层的扩散层组织,各亚层内元素含量存在突变;铝剥离表面检测到大量铜元素,化合物相包括CuAl₂,Cu₉Al₄,CuAl和Cu₄Al,而铜剥离表面只检测到Cu₉Al₄和Cu₄Al;异步轧制工艺可以提高界面结合强度和复合带的拉伸性能,使界面层在拉伸断裂后破坏程度降低.     

沉积温度对TiN/SiN_x多层膜结构及力学性能的影响

采用反应磁控溅射方法,在不同沉积温度条件下制备了一系列多晶TiN/SiNx纳米多层膜,并用X射线衍射仪（XRD）、X射线反射仪（XRR）及纳米压痕仪（Nanoindenter）表征了材料的微观结构及力学性能。结果表明,沉积温度对多层膜的界面结构、择优取向及力学性能有显著影响：当沉积温度为室温时,多层膜的界面较高温条件下粗糙;而多层膜的择优取向在沉积温度为400℃时呈现强烈的TiN（200）织构;多层膜的硬度及弹性模量在室温至400℃温度范围内变化不大。     

High-Tc superconducting materials for electric power applications.

Large-scale superconducting electric devices for power industry depend critically on wires with high critical current densities at temperatures where cryogenic losses are tolerable. This restricts choice to two high-temperature cuprate superconductors, (Bi,Pb)2Sr2Ca2Cu3Ox and YBa2Cu3Ox, and possibly to MgB2, recently discovered to superconduct at 39 K. Crystal structure and material anisotropy place fundamental restrictions on their properties, especially in polycrystalline form. So far, power applications have followed a largely empirical, twin-track approach of conductor development and construction of prototype devices. The feasibility of superconducting power cables, magnetic energy-storage devices, transformers, fault current limiters and motors, largely using (Bi,Pb)2Sr2Ca2Cu3Ox conductor, is proven. Widespread applications now depend significantly on cost-effective resolution of fundamental materials and fabrication issues, which control the production of low-cost, high-performance conductors of these remarkable compounds.     

The interface between silicon and a high-k oxide

The ability of the semiconductor industry to continue scaling microelectronic devices to ever smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical effects: as the thickness of conventional silicon dioxide (SiO(2)) gate insulators is reduced to just a few atomic layers, electrons can tunnel directly through the films. Continued device scaling will therefore probably require the replacement of the insulator with high-dielectric-constant (high-k) oxides, to increase its thickness, thus preventing tunnelling currents while retaining the electronic properties of an ultrathin SiO(2) film. Ultimately, such insulators will require an atomically defined interface with silicon without an interfacial SiO(2) layer for optimal performance. Following the first reports of epitaxial growth of AO and ABO(3) compounds on silicon, the formation of an atomically abrupt crystalline interface between strontium titanate and silicon was demonstrated. However, the atomic structure proposed for this interface is questionable because it requires silicon atoms that have coordinations rarely found elsewhere in nature. Here we describe first-principles calculations of the formation of the interface between silicon and strontium titanate and its atomic structure. Our study shows that atomic control of the interfacial structure by altering the chemical environment can dramatically improve the electronic properties of the interface to meet technological requirements. The interface structure and its chemistry may provide guidance for the selection process of other high-k gate oxides and for controlling their growth.     

Mo-30Cu合金室温变形组织

对Mo-30Cu合金室温拉伸性能进行了研究,并对其断口进行观察分析.通过对Mo-30Cu合金冷轧实验,研究了不同变形量下组织的变化规律.结果表明:Mo-30Cu合金的断裂以Cu相的韧性断裂为主,并伴随着Mo/Cu界面的分离和Mo晶粒的解理断裂.Mo/Cu界面的分离和Mo晶粒的解理断裂是Mo-30Cu合金室温轧制过程中产生裂纹的主要原因.     

Growth dynamics of pentacene thin films

The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic thin films do not compare favourably to those of single-crystal materials. Moreover, the basic physical principles governing organic thin-film growth and crystallization are not well understood. Here we report an in situ study of the evolution of pentacene thin films, utilizing the real-time imaging capabilities of photoelectron emission microscopy. By a combination of careful substrate preparation and surface energy control, we succeed in growing thin films with single-crystal grain sizes approaching 0.1 millimetre (a factor of 20-100 larger than previously achieved), which are large enough to fully contain a complete device. We find that organic thin-film growth closely mimics epitaxial growth of inorganic materials, and we expect that strategies and concepts developed for these inorganic systems will provide guidance for the further development and optimization of molecular thin-film devices.     

表面处理方式对钛/钢复合板界面结合性能的影响

采用真空制坯轧制复合法,在相同的加热温度、轧制道次和压下量等工艺条件下,分别对钢丝刷打磨、酸洗和带水砂带机打磨的表面处理方式,研究了3组钛/钢复合板的界面组织和力学性能.分析了表面处理方式对界面结合性能的影响.结果表明:带水砂带机表面处理方式下的钛/钢复合界面生成连续均匀的TiC层,剪切断口呈韧窝状,界面剪切强度稳定,平均强度达到242.6MPa.其他两种表面处理方式下的钛/钢复合板界面生成断续的TiC层,其剪切强度均未满足国家标准.     

Inkjet printing of single-crystal films

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4?cm(2)?V(-1)?s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.     

Mesoscopic fast ion conduction in nanometre-scale planar heterostructures

Ion conduction is of prime importance for solid-state reactions in ionic systems, and for devices such as high-temperature batteries and fuel cells, chemical filters and sensors. Ionic conductivity in solid electrolytes can be improved by dissolving appropriate impurities into the structure or by introducing interfaces that cause the redistribution of ions in the space-charge regions. Heterojunctions in two-phase systems should be particularly efficient at improving ionic conduction, and a qualitatively different conductivity behaviour is expected when interface spacing is comparable to or smaller than the width of the space-charge regions in comparatively large crystals. Here we report the preparation, by molecular-beam epitaxy, of defined heterolayered films composed of CaF2 and BaF2 that exhibit ionic conductivity (parallel to the interfaces) increasing proportionally with interface density--for interfacial spacing greater than 50 nanometres. The results are in excellent agreement with semi-infinite space-charge calculations, assuming a redistribution of fluoride ions at the interfaces. If the spacing is reduced further, the boundary zones overlap and the predicted mesoscopic size effect is observed. At this point, the single layers lose their individuality and an artificial ionically conducting material with anomalous transport properties is generated. Our results should lead to fundamental insight into ionic contact processes and to tailored ionic conductors of potential relevance for medium-temperature applications.     

Ti对Al2O3／Ni复合材料相界面润湿及力学性能的影响

以无压烧结方式制备了Ａｌ２Ｏ３／２０％Ｎｉ（Ｔｉ）（体积分数）复合材料．通过分析Ｔｉ元素的分布状态，研究了Ｔｉ添加剂对Ａｌ２Ｏ３／２０％Ｎｉ复合材料相界面润湿及力学性能的影响规律．结果表明，Ｔｉ元素集中分布在Ａｌ２Ｏ３／Ｎｉ相界面附近，并通过促进相界面润湿，强化相界面结合而显著改善复合材料的力学性能．实验成分范围内，随Ｔｉ含量增加，三点弯曲强度提高，而断裂韧性在３％Ｔｉ（质量百分数）时具有最大值，为６．２ＭＰａｍ１２．断口形貌分析表明，复合材料的增韧机理为桥接机理     

自组装单层膜的研究

自组装膜(self-assembled monolayers,SAMs)是通过有机分子反应活性头基与固体界面之间自发反应形成的稳定、有序、紧密堆积的超薄膜结构.近年来,通过界面自组装在固体表面形成超薄层有机材料的研究受到人们的广泛关注,在非线形化学、分子生物学、材料科学、分子器件、生物传感器等领域具有广泛的应用前景.对自组装单层膜的制备、特点、类型、机理和应用等方面进行了探讨.