基于Monte Carlo模拟的实际纳米MOSFET散粒噪声抑制研究

实验测量和理论结果均表明，随着MOS器件尺寸缩小到纳米尺度，其过剩噪声的主要成分将从以热噪声为主转变为以散粒噪声为主，且散粒噪声受费米抑制作用和库仑抑制作用．而目前对纳米MOSFET散粒噪声抑制的研究时，采取了完全不考虑其抑制，或者只是强调抑制的存在而并未给出具体的抑制分析．本文将采用蒙特卡罗（Monte Carlo）模拟方法对实际纳米MOSFET电流噪声进行数值模拟研究，并考虑费米作用和库仑作用对散粒噪声的抑制影响，分别得到费米抑制因子和费米与库仑共同作用时的抑制因子．在此基础上，重点考察栅极电压、源漏电压、温度和掺杂浓度对散粒噪声抑制的影响及其关系的理论分析，得到的模拟结果与文献给出的实验结果和介观理论结果相吻合．

Research on shot noise suppression in realistic nano-MOSFETs based on Monte Carlo simulation

Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise can be acted by Fermi and Coulomb suppression. But previous studies on shot noise suppression in nano-MOSFET either ignored the suppression or just emphasized the existence of it but giving no more deep research. Based on Monte Carlo simulation, current noise in realistic nano-MOSFETs is simulated with considering Fermi effect and Coulomb interaction. Thus, shot noise suppression factor （Fano） considering Fermi effect and the Fano considering Fermi effect and Coulomb interaction are obtained. The variation of suppression-factors with source-drain voltage, gate voltage, temperature and source- drain doping are investigated with theoretical analysis. The results we obtained are consistent with experiments and the mesoscopic theoretically explain.