| Temperature characteristics of electrical behavior of W-Bi-Ti-O ceramics at low field |
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| 引用本文： | CHENMin LIUZuli WANGChuancong WANGYu YANGXinsheng YAOKailun. Temperature characteristics of electrical behavior of W-Bi-Ti-O ceramics at low field[J]. 科学通报(英文版), 2004, 49(4): 313-316. DOI: 10.1007/BF02900311 |
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| 作者姓名： | CHENMin LIUZuli WANGChuancong WANGYu YANGXinsheng YAOKailun |
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| 作者单位： | [1]DepartmentofPhysics,HuazhongUniversityofScienceandTechnology,Wuhan430074,China [2]NationalLaboratoryofSolidStateMicrostructures,NanjingUniversity,Nanjing210008,China |
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| 摘 要： | Bi2WTi3O12 ceramics are fabricated by the conventional solid-state reaction process. With increasing temperature the sample first has metallic behavior, then strong electrical fluctuations above 100℃, and finally exhibits stable nonlinear properties characterized by semiconductivity above 300℃ at low field (E≤100 V/mm). The Arrhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. Based on the phase transition of tungsten trioxide from room temperature to about 300℃, the electrical properties of Bi2WTi3O12 ceramics can be explained.
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| 关 键 词： | 温度特征 Bi2WTi3O12陶瓷材料 Arrhenius定律 铋 钛 钨 |
| 收稿时间： | 2003-04-09 |
| 修稿时间： | 2003-11-20 |
Temperature characteristics of electrical behavior of W-Bi-Ti-O ceramics at low field |
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| Chen,Min,Liu,Zuli,Wang,Chuancong,Wang,Yu,Yang,Xinsheng,Yao,Kailun. Temperature characteristics of electrical behavior of W-Bi-Ti-O ceramics at low field[J]. Chinese science bulletin, 2004, 49(4): 313-316. DOI: 10.1007/BF02900311 |
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| Authors: | Chen Min Liu Zuli Wang Chuancong Wang Yu Yang Xinsheng Yao Kailun |
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| Affiliation: | (1) Department of Physics, Huazhong University of Science and Technology, 430074 Wuhan, China;(2) National Laboratory of Solid State Microstructures, Nanjing University, 210008 Nanjing, China;(3) Department of Physics, Hunan Institute of Science and Technology, 414000 Yueyang, China |
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| Abstract: | Bi2WTi3O12 ceramics are fabricated by the conventional solid-state reaction process. With increasing temperature the sample first has metallic behavior, then strong electrical fluctuations above 100°C, and finally exhibits stable nonlinear properties characterized by semiconductivity above 300°C at low field (E ⩽ 100 V/mm). The Arrhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. Based on the phase transition of tungsten trioxide from room temperature to about 300 °C, the electrical properties of Bi2WTi3O12 ceramics can be explained. |
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| Keywords: | current-voltage characteristics bismuth titanate tung-sten trioxide. |
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