Controllable growth of dielectric/semiconductor integrated films

Currently, electronic information systems are developing quickly towards further miniaturization and monolithic integration so as to realize smaller volume, higher velocity and lower power consumption. For this purpose, the integration of all sorts of active devices (mainly fabricated by semiconductors) with passive devices (fabricated by functional materials) is particularly important and impendent. Therefore, it is necessary to integrate multifunctional oxide dielectrics possessing electric, magnetic, acoustic, optical and thermal properties characterized by spontaneous polarization with semiconductors bearing the characters of carrier transportation to form artificial structures via deposition of solid films. This kind of integrated films may have two characters, i.e., the all-in-one multifunction and modulation of electromagnetic properties by hetero-interface. This makes it possible to realize monolithic integration of detecting, processing, transmission, executing and storing of electronic information. Meanwhile, possible integrated coupling effects will be pursued instead of exploring the limited physical properties of the related materials. In this paper, we put forward a new direction of developing electronic devices with higher performances, and demonstrate some results concerning our recent research on the interface-controllable integrated growth of dielectrics and GaN. Recent progresses of the related research in the world are also reviewed. Supported by the State Key Development Program for Basic Research of China (Grant No. 61363Z01) and National Natural Science Foundation of China (Grant No. 50772019)