| 高k介质纳米MOSFET栅电流和电容模型 |
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| 引用本文： | 王伟,孙建平,顾宁.高k介质纳米MOSFET栅电流和电容模型[J].南京邮电大学学报(自然科学版),2006,26(6):6-10. |
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| 作者姓名： | 王伟 孙建平 顾宁 |
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| 作者单位： | 南京邮电大学,光电工程学院,江苏,南京,210003;东南大学,分子与生物分子电子学教育部重点实验室,江苏,南京,210096;美国密西根大学,电气工程和计算机科学系,美国密西根州,安娜堡;东南大学,分子与生物分子电子学教育部重点实验室,江苏,南京,210096 |
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| 摘 要： | 介绍了一种纳米MOSFET（场效应管）栅电流和电容的统一模型，该模型基于Schrfidinger-Poisson方程自洽全量子数值解，特别适用于高k栅介质和多层高k栅介质纳米MOSFET。运用该方法计算了各种结构和材料高k介质的MOSFET栅极电流，并进行了分析比较。模拟得出栅极电流和电容与实验结果符合。
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| 关 键 词： | 高k 栅电流 量子模型 |
| 文章编号： | 1673-5439（2006）06-0006-05 |
| 收稿时间： | 2006-01-10 |
| 修稿时间： | 2006-01-102006-03-29 |
Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks |
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| WANG Wei,SUN Jian-ping,GU Ning.Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks[J].Journal of Nanjing University of Posts and Telecommunications,2006,26(6):6-10. |
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| Authors: | WANG Wei SUN Jian-ping GU Ning |
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| Institution: | 1. College of Optoelectronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China; 2. Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI, USA; 3. National Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, China |
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| Abstract: | A unified approach, particularly suitable for evaluation of high-k stack structures consisting of multiple layers of different dielectrics is presented. This approach is based on fully self-consistent solutions to the Schroe dinger-Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The results of gate current and capacitance obtained from our model are in very good agreement with experimental data. |
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| Keywords: | High-k Gate current Quantum-mechanical model |
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