| 磁控管Ⅴ—Ⅰ特性的近似分析及其应用 |
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| 引用本文： | 冯文荃. 磁控管Ⅴ—Ⅰ特性的近似分析及其应用[J]. 南京大学学报(自然科学版), 1990, 0(4) |
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| 作者姓名： | 冯文荃 |
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| 作者单位： | 南京大学物理系 |
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| 摘 要： | 磁控管V—I特性有三种近似等效模型,它们是由线性等效得到的静态阻抗模型,级数展开得到的偏压二极管模型及由泰勒级数展开得到的小信号模型,三种等效有着完全不同的性质,实践中相应的有不同的应用范围。本文介绍了它们各自的应用限制,着重介绍了小信号模型在加速器领域的应用。
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| 关 键 词： | 磁控管 静态阻抗 动态阻抗 偏压二极管 小信号模型 推出系数 |
THE APPROXIMATE ANALYSIS OF MAGNETRON V-I CHARACTERISTICS AND ITS APPLICATIONS |
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| Feng Wenquan. THE APPROXIMATE ANALYSIS OF MAGNETRON V-I CHARACTERISTICS AND ITS APPLICATIONS[J]. Journal of Nanjing University: Nat Sci Ed, 1990, 0(4) |
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| Authors: | Feng Wenquan |
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| Affiliation: | Feng Wenquan Department of Physics |
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| Abstract: | The V-I characteristics of a microwave magnetron have three different approximate equivalent models.One is the static impedance model which is a linear equivalent.The sec- ond is a biased-diode model obtained with a power series.The last one is a small signal model gained by means of a Taler series expansion.These models havequite different char- acteristics and applications.This paper emphasizes their respective application limits,espec- ially the application of the small signal model in the accelerator area. |
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| Keywords: | magnetron static impedance dynamic impedance biased-diode small signal model pushing figure |
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