| 光致发光谱测量掺硅AlGaAs中的DX能级 |
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| 引用本文： | 程兴奎,王卿璞,马洪磊,Ｖ．Ｗ．Ｌ．Ｃｈｉｎ,Ｔ．Ｏｓｏｔｃｈａｎ,Ｔ．Ｌ．Ｔａｎｓｌｅｙ,Ｍ．Ｒ．Ｖａｕｇｈａｎ,Ｇ．Ｊ．Ｇｒｉｆｆｉｔｈｓ.光致发光谱测量掺硅AlGaAs中的DX能级[J].山东大学学报(理学版),1998(3). |
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| 作者姓名： | 程兴奎 王卿璞 马洪磊 Ｖ．Ｗ．Ｌ．Ｃｈｉｎ Ｔ．Ｏｓｏｔｃｈａｎ Ｔ．Ｌ．Ｔａｎｓｌｅｙ Ｍ．Ｒ．Ｖａｕｇｈａｎ Ｇ．Ｊ．Ｇｒｉｆｆｉｔｈｓ |
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| 作者单位： | 山东大学光电材料与器件研究所 |
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| 摘 要： | 在调制掺杂ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构的光致发光谱中，靠近强发光峰的低能端存在几个弱峰，且发光强度随温度的增加而变化．这些弱峰是由于掺硅ＡｌＧａＡｓ中ＤＸ中心上的电子向起受主作用的ＳｉＡｓ原子跃迁复合而引起．由此确定ＤＸ中心有四个能级，其激活能分别为０．３５ｅＶ，０．３７ｅＶ，０．３９ｅＶ和０．４１ｅＶ．
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| 关 键 词： | 光致发光 掺硅AlGaAs DX能级 |
DX LEVEL IN Si DOPED AlGaAs MEASURED BY PHOTOLUMINESCENCE SPECTRUM |
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| Cheng Xingkui,Wang Qingpu,Ma Honglei.DX LEVEL IN Si DOPED AlGaAs MEASURED BY PHOTOLUMINESCENCE SPECTRUM[J].Journal of Shandong University,1998(3). |
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| Authors: | Cheng Xingkui Wang Qingpu Ma Honglei |
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| Abstract: | In photoluminescence spectra for a modulated doped AlGaAs/GaAs multiquantum well strcuture,there are several low energy peaks near a strong luminescence peak,and their intensity changes with temperature.These low energy peaks arise from transition of electron on DX centeres in AlGaAs to Si As atoms.On this view,we come to the conclusion that the DX centeres in Si doped AlGaAs appear as four level and their activation energy is about 0.35 eV,0.37 eV,0.39 eV and 0.41 eV,respectively. |
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| Keywords: | photoluminescence Si doped AlGaAs DX level |
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