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阶跃光激励下半导体的温度变化
引用本文:叶茂群,陈赵江,方健文,刘世清. 阶跃光激励下半导体的温度变化[J]. 浙江师范大学学报(自然科学版), 2011, 34(3): 286-291
作者姓名:叶茂群  陈赵江  方健文  刘世清
作者单位:浙江师范大学 数理与信息工程学院,浙江 金华,321004
基金项目:国家自然科学基金资助项目
摘    要:建立了阶跃光激励下半导体材料温度变化的一维理论模型.采用本征函数法得到了阶跃光激励下半导体中光生载流子和温度随时间的变化关系,并研究了少数载流子寿命对这种变化的影响.同时,利用阶跃光激励的光热光偏转实验研究了少数载流子寿命不同的半导体样品的光热光偏转信号.实验结果与理论结果符合较好,表明阶跃光激励的光热技术可用于对半导体材料参数进行表征.

关 键 词:光热效应  阶跃光激励  半导体材料  少数载流子寿命

Temperature variation of semiconductors with step optical excitation
YE Maoqun,CHEN Zhaojiang,FANG Jianwen,LIU Shiqing. Temperature variation of semiconductors with step optical excitation[J]. Journal of Zhejiang Normal University Natural Sciences, 2011, 34(3): 286-291
Authors:YE Maoqun  CHEN Zhaojiang  FANG Jianwen  LIU Shiqing
Affiliation:YE Maoqun,CHEN Zhaojiang,FANG Jianwen,LIU Shiqing (College of Mathematics,Physics and Information Engineering,Zhejiang Normal University,Jinhua Zhejiang 321004,China)
Abstract:A one-dimensional theoretical model of the temperature variation in semiconductor materials with step optical excitation was presented.Variations of plasma density and temperature with time were obtained by using an eigen-function method,and the influence of the minority carriers life time on these variations was studied.Meanwhile,photothermal deflection(PTD) signals of semiconductor samples with different minority carriers life time were investigated by PTD experimental system with the step optical excitat...
Keywords:photothermal effect  step optical excitation  semiconductor materials  minority carriers life time  
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