| 热载流子效应对n-MOSFETs可靠性的影响 |
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| 引用本文： | 朱炜玲,黄美浅,章晓文,陈平,李观启. 热载流子效应对n-MOSFETs可靠性的影响[J]. 华南理工大学学报(自然科学版), 2003, 31(7): 33-36 |
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| 作者姓名： | 朱炜玲 黄美浅 章晓文 陈平 李观启 |
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| 作者单位： | 1. 华南理工大学应用物理系,广东,广州,510640
2. 信息产业部电子5所,广东,广州,510610 |
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| 摘 要： | 研究热载流子效应对不同的沟道长度n-MOSFETs退化特性的影响．结果表明，随着器件沟道长度的减小，其跨导退化明显加快，当沟道长度小于1μm时退化加快更显著．这些结果可以用热载流子注入后界面态密度增加来解释．
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| 关 键 词： | 热载流子效应 MOSFET 跨导 阈值电压 可靠性 |
| 文章编号： | 1000-565X(2003)07-0033-04 |
| 修稿时间： | 2002-11-20 |
Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs |
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| Zhu Wei-ling Huang Mei-qian Zhang Xiao-wen Chen Ping Li Guan-qi. Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs[J]. Journal of South China University of Technology(Natural Science Edition), 2003, 31(7): 33-36 |
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| Authors: | Zhu Wei-ling Huang Mei-qian Zhang Xiao-wen Chen Ping Li Guan-qi |
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| Abstract: | Influence of hot-carrier-effect on degradation characteristics of different channel length n-MOSFETs have been investigated. As the channel length of device decreases, the rate of transconductance degradation is fast, especially when its channel length is less than 1 um, the rate of transconductance degradation is faster. These results can be explained by interface state density increased after hot carrier injection. |
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| Keywords: | hot-carrier-effect MOSFET transconductance threshold voltage reliability |
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