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重复过流冲击下IGBT的性能退化研究
引用本文:刘丹,徐正国. 重复过流冲击下IGBT的性能退化研究[J]. 上海应用技术学院学报:自然科学版, 2015, 15(3): 232-235
作者姓名:刘丹  徐正国
作者单位:浙江大学工业控制技术国家重点实验室,浙江大学控制科学与工程学系,杭州310027;浙江大学工业控制技术国家重点实验室,浙江大学控制科学与工程学系,杭州310027
基金项目:国家自然科学基金资助项目(61473254,61134001);国家高技术研究发展计划资助项目(2012AA06A404)
摘    要:实际应用中,功率变流器经常会发生过流,重复的过流冲击会造成其功率器件绝缘栅型双极性晶体管(IGBT)的性能退化,并形成累积损伤,最终导致失效,而突然的失效会带来经济损失和安全问题,故需对重复过流冲击下IGBT的性能退化进行研究,建立相应的在线监测方法.针对目前对IGBT在重复过流下性能退化的研究较欠缺,搭建了过流冲击的实验平台来实现IGBT的重复过流冲击实验;采集重复过流冲击过程中IGBT外部端子的电气量,并提出相应的新的性能退化指标——导通电阻.结果表明:重复过流冲击会造成IGBT的性能退化,影响其外部电气特性;提出的退化指标——导通电阻明显地表征了IGBT内部累积损伤的程度.

关 键 词:绝缘栅型双极性晶体管(IGBT);过流;退化;导通电阻

Performance Degradation Research on IGBT under Repetitive Over-Current Conditions
Dan Liu and Xu Zhengguo. Performance Degradation Research on IGBT under Repetitive Over-Current Conditions[J]. Journal of Shanghai Institute of Technology: Natural Science, 2015, 15(3): 232-235
Authors:Dan Liu and Xu Zhengguo
Affiliation:State Key Laboratory of Industrial Control Technology, Department of Control Science and Engineering,Zhejiang University, Hangzhou, 310027;State Key Laboratory of Industrial Control Technology, Department of Control Science and Engineering,Zhejiang University, Hangzhou, 310027
Abstract:In the practical application, over-current conditions often emerge during the operation of power converters. The repetition of over-current conditions is responsible for the performance degradation and cumulative damage of power devices (IGBTs), which eventually leads to a failure. Since sudden failures will cause safety issues and economic losses, it is necessary to investigate the performance degradation of IGBT under repetitive over-current conditions and establish the corresponding on-line monitoring approaches. However, the research about performance degradation of IGBT under repetitive over-current conditions is insufficient. An experimental platform was presented, with which a series of repetitive over-current experiments had been completed. In the meantime, terminal electrical characteristics of IGBT were acquired to extract a new aging indicator,on resistance. The experimental results showed that the performance of IGBT degraded under repetitive over-current conditions, which affected the terminal electrical characteristics of IGBT. And the proposed aging indictor, on resistance, evidently showed the degree of accumulative damage in IGBT.
Keywords:insulated gate bipolar transistors(IGBT)   over-current   degradation   on resistance
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