| 一种新型的BCD工艺栅驱动集成电路 |
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| 引用本文： | 张为,陈曙光. 一种新型的BCD工艺栅驱动集成电路[J]. 北京理工大学学报, 2011, 31(9): 1080-1084 |
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| 作者姓名： | 张为 陈曙光 |
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| 作者单位： | 天津大学电子信息工程学院,天津,300072 |
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| 摘 要： | 分析了高压栅极驱动集成电路热耗散产生的原因和隔离技术的特点,研制出一种新型的700VBCD工艺栅驱动集成电路.通过减小LDMOS电流和开启时间降低芯片高速工作时的发热量,配合电路设计调整了BCD工艺,解决了高功耗和地线浮动等制约其发展和应用的难题.仿真和测试结果表明,该集成电路工作在1MHz,400V时,总功耗仅为0.4W.
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| 关 键 词： | 功率集成电路 BCD工艺 栅驱动集成电路 横向双扩散MOS管 |
| 收稿时间： | 2010-12-24 |
A Novel Gate Driver IC Based on BCD Technology |
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| ZHANG Wei and CHEN Shu-guang. A Novel Gate Driver IC Based on BCD Technology[J]. Journal of Beijing Institute of Technology(Natural Science Edition), 2011, 31(9): 1080-1084 |
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| Authors: | ZHANG Wei and CHEN Shu-guang |
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| Affiliation: | School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | By analyzing the features of heat dissipation and isolation technology, that are usually adopted in fabrication of high-voltage gate drivers, a novel gate driver IC with 700 V BCD technology was developed. The current and turn-on time of LDMOS were reduced and the processes of BCD technology were adjusted. As a result, the issues such as high power dissipation and ground floating, that restricted the development and application of such integrated circuits, could be solved. Simulation and test results show that our solution greatly improves the performance of the gate driver and its power dissipation is only about 0.4 W when operating under 400 V at 1 MHz. |
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| Keywords: | power integrated circuit BCD process gate driver lateral doublediffused MOS(LDMOS) |
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