物理热蒸发法制备CdS/SiO2纳米线阵列和CdS纳米带

利用物理热蒸发法蒸发CdS和CdO的混合粉末，Si衬底表面发生了选择性刻蚀，并由此制备出CdS／SiO2纳米线阵列和CdS纳米带．研究了CdS／SiO2纳米线阵列的形成原因和CdS纳米带的生长过程，结果表明：CdS枝晶的生长对CdS／SiO2纳米线阵列的形成起到了非常重要的作用；CdS／SiO2纳米线阵列的形成符合“纳米电化学自组织机制”；CdS纳米带的生长过程为气一目过程．

CdS/SiO2 Nanowire Arrays and CdS Nanobelts Synthesized by Thermal Evaporation

CdS/SiO2 nanowire arrays and CdS nanobelts were synthesized by thermal evaporation of CdS and CdO mixture powders, and highly selective etching occurred on the surfaces of silicon substrate. The growth mechanism of CdS/SiO2 nanowire arrays and the growth process of CdS nanobelts were studied. The results show that the growth of CdS dendrites plays an important role in the formation of CdS/SiO2 nanowire arrays; the formation of CdS/SiOz nanowire arrays complies with the self-assembling nanoelectrochemistry mechanism; and the growth of CdS nanobelts relies on a vapor-solid transformation.