| Polycrystalline ZnSx Se1—x thin films deposited on ITO glass by MBE |
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| 作者姓名： | Shen DK Sou IK Han GR Du PY Que DL |
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| 作者单位： | [1]DepartmentofPhysics,HongKongUniversityofScienceandTechnology,HongKong,China [2]StateKeyLaboratoryofSiliconMaterialScience,ZhejiangUniversity,Hangzhou310027,China |
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| 摘 要： | MBE growth of ZnSx Se1-x thin films on ITO coated glass substrates were carried out using ZnS and Se Sources with the substrate temperature ranging from 270℃ to 330℃.The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSx Se1-x thin films had a preferred orientation along the (111) planes.The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence,with the optimized temperature being about 290℃.Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence.Hing qual-ity ZnSx Se1-x thin film growm at the optimized temperature had the smoothest surface with lowest RMS valus of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.
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| 关 键 词： | 多晶薄膜 分子束取向 薄膜生长 薄膜结构 锌硫硒半导体薄膜 氧化铟玻璃 |
Polycrystalline ZnS(x)Se(1 - x) thin films deposited on ITO glass by MBE |
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| Shen DK,Sou IK,Han GR,Du PY,Que DL.Polycrystalline ZnS(x)Se(1 - x) thin films deposited on ITO glass by MBE[J].Journal of Zhejiang University Science,2003,4(2):131-135. |
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| Authors: | Shen Da-Ke Sou I K Han Gao-Rong Du Pi-Yi Que Duan-Lin |
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| Institution: | State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China. |
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| Abstract: | MBE growth of ZnS(x)Se(1 - x) thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270 degrees C to 330 degrees C . The XRD theta/2theta spectra resulted from these films indicated that the as-grown polycrystalline ZnS(x)Se(1 - x) thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 degrees C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnS(x)Se(1 - x) thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure. |
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