| Blue light emission of porous silicon subjected to RTP treatments |
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| 作者姓名： | ZHAO Yi YANG Deren LIN Lei QUE Duanlin |
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| 作者单位： | [1]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China [2]Department of Material Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan |
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| 基金项目： | This work was supported by the National Natural Science Foundation of China （Grant No. 60225010）. |
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| 摘 要： | Porous silicon samples were treated with the rapid thermal process (RTP) under different circumstances (N2, Ar, O2 and Air). Before and after treatments, the samples were checked by means of photoluminescence (PL) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Four blue light emission peaks were found in the PL spectra of porous silicon samples subjected to the RTP treatments at temperatures above 400℃. The peak positions were found not to vary with the circumstances and temperatures of RTP treatments. It is considered that due to oxidation during the RTP treatments, the pole size of Si crystal in porous silicon decreased, resulting in the blue shift of light emission. Correlated with the Si crystal sizes discontinuous hypothesis and previous researchers' theory calculation, the PL peak positions did not vary with the RTP temperature and circumstances.
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| 关 键 词： | 多孔渗水硅 蓝光发射 快速热进程 光致发光 |
| 收稿时间： | 2005-11-02 |
| 修稿时间： | 2005-11-022006-05-22 |
Blue light emission of porous silicon subjected to RTP treatments |
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| ZHAO Yi YANG Deren LIN Lei QUE Duanlin.Blue light emission of porous silicon subjected to RTP treatments[J].Chinese Science Bulletin,2006,51(22):2696-2699. |
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| Authors: | Yi Zhao Deren Yang Lei Lin Duanlin Que |
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| Institution: | (1) State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China;(2) Department of Material Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan |
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| Abstract: | Porous silicon samples were treated with the rapid thermal process (RTP) under different circumstances (N2, Ar, O2 and Air). Before and after treatments, the samples were checked by means of photoluminescence (PL) spectroscopy and Fourier
transform infrared spectroscopy (FTIR). Four blue light emission peaks were found in the PL spectra of porous silicon samples
subjected to the RTP treatments at temperatures above 400°C. The peak positions were found not to vary with the circumstances
and temperatures of RTP treatments. It is considered that due to oxidation during the RTP treatments, the pole size of Si
crystal in porous silicon decreased, resulting in the blue shift of light emission. Correlated with the Si crystal sizes discontinuous
hypothesis and previous researchers’ theory calculation, the PL peak positions did not vary with the RTP temperature and circumstances. |
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| Keywords: | porous silicon blue light emission rapid thermal process |
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