| 中频等离子体化学气相沉积法制备ZnO薄膜 |
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| 引用本文： | 黄兴奎.中频等离子体化学气相沉积法制备ZnO薄膜[J].中国西部科技,2007(7):1-3. |
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| 作者姓名： | 黄兴奎 |
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| 作者单位： | 荆楚理工学院,电子信息学院,湖北,荆门,448000 |
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| 摘 要： | ZnO是一种多功能材料,目前处于世界范围的研究热潮中。为了拓展和改善ZnO的应用,采用中频等离子体化学气相沉积法(MF-PCVD)制备了ZnO薄膜,并研究了衬底温度对晶型和成膜速率的影响．
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| 关 键 词： | ZnO薄膜 中频等离子体化学气相沉积 村底温度 |
| 修稿时间： | 2007-05-17 |
Preparation of ZnO film by MF-PCVD |
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| HUANG Xing-kui.Preparation of ZnO film by MF-PCVD[J].Science and Technology of West China,2007(7):1-3. |
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| Authors: | HUANG Xing-kui |
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| Institution: | College of Electronic Information Engineering, Jingchu University of Science and Engineering, lingmen 448000 |
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| Abstract: | ZnO is a multi-functional material,now itis wildly studied in the world wide.In this paper,ZnO is prepared by medium-frequency plasma chemistry vapor deposition(MF-PCVD)in order to improve the application of ZnO film,as well as the influences of substrate temperature on the crystal structure and deposition rate are studied. |
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| Keywords: | ZnO thin film MF-PCVD substrate temperature |
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