| GaAs／GaAlAs量子阱中磁极化子温度特性的研究 |
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| 引用本文： | 魏宝华,顾世洧.GaAs／GaAlAs量子阱中磁极化子温度特性的研究[J].上海交通大学学报,1992,26(6):70-77. |
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| 作者姓名： | 魏宝华 顾世洧 |
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| 作者单位： | 上海交通大学应用物理系
(魏宝华)，上海交通大学应用物理系(顾世洧) |
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| 摘 要： | 本文发展了Larsen的微扰理论,研究了任意磁场强度和有限温度下,GaAs/GaAlAs 量子阱中磁极化子的自陷能与磁场和温度的关系.同时考虑了电子与体内纵光学模(BO)和表面光学模(SO)声子的相互作用,结果表明:磁极化子的自陷与温度的关系与磁场强度的大小密切相关,对电于准二维系统,电子与SO 声子的相互作用起着很明显的作用.
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| 关 键 词： | 磁极化子 量子阱 自陷能 半导体 |
Studies of a Magnetopolaron in GaAs/GaAIAs Quantum Well at Finite Temperatures |
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| Wei Baohua Gu Shiwei.Studies of a Magnetopolaron in GaAs/GaAIAs Quantum Well at Finite Temperatures[J].Journal of Shanghai Jiaotong University,1992,26(6):70-77. |
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| Authors: | Wei Baohua Gu Shiwei |
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| Institution: | Wei Baohua Gu Shiwei |
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| Abstract: | Taking into account the interaction of an electron with both bulk-longitudinal-optical and surface-optical phonons.We studied the magnetic fieldand temperature dependence of the self-trapping energies of a magretopolaron inGaAs/GaAlAs quantum well at finite temperature for arbitrary magnetic fieldstrengths.It is shown that the temperature dependence of the self-trappingenergies are fremondonsly depended upon the magretic field strength and that theelectron-SO phonon interaction plays an important role. |
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| Keywords: | magnetopolaron quantum well optical phonon self-trapping energies |
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