SiO2沟槽晶圆片在快速热处理中的温度分布

采用传导与辐射耦合传热模型，对快速热处理工艺中晶圆片内传热过程进行了数值模拟，研究了SiO2沟槽宽度和沟槽排列密度对晶圆片温度分布的影响.结果表明:在SiO2沟槽宽度相同的情况下，沟槽排列密度越大，晶圆片总的温度水平越高，但对温度均匀性几乎没有影响.这是由于沟槽排列密度增大使得晶圆片表面中SiO2所占份额增加，晶圆片表面总的吸收系数增大，吸收的入射辐射能增多，从而使温度水平提高.在SiO2沟槽排列密度相同的条件下，沟槽宽度的变化对于晶圆片总的温度水平和温度均匀性几乎没有影响.

Temperature Distribution of SiO2 Trench Wafer in Rapid Thermal Process

The heat transfer of a wafer in rapid thermal process was simulated using a model combining heat conduction with heat radiation to investigate the effects of the width of SiO2 trenches and their arrangement density on the temperature distribution of the wafer. The results show that, in the case of the same SiO2 trench width, the temperature level of the wafer rises with the increase of the pattern arrangement density, but the temperature uniformity on the wafer surface changes little. Increasing the pattern density can enlarge the proportion of SiO2 on the wafer surface and, as a result, the surface absorptance and the incident radiation absorption increase, which elevates the temperature level. When the arrangement density of the SiO2 trenches is constant, the SiO2 trench width has little influence on the temperature level and uniformity.