P-N结器件模拟参数的确定

在给出半导体器件模拟基本方程的基础上，为减少模拟过程中的运算量，对模拟中所需的参数在何种状况下才开始起作用加以讨论。如载流子的雪崩系数，只有当电场强度达到某一值时才会考虑由于碰撞电离而引起的电子和空穴的产生，即载流子的雪崩系数，从而影响载流子的产生率。同时还给出了载流子的复合率、迁移率、本征载流子浓度、能带宽度、热传导系数随电场或温度的变化规律。

Determination of Parameters for P-N Junction Device Modeling

To reduce the computational work, when the parameters needed in modeling begin to function is discussed on the basis of the formula for semiconductor device modeling. For example, the generation of electrons and holee due to impact ionization takes place only when the strength of electric field reaches a certain value. Besicdes, intrinsic carrier density energy gap and the rules of the changing of thermal conductivity with temperatwre are offered.