| Si／GaP（111）界面生长及其形成过程 |
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| 引用本文： | 黄春晖,王迅. Si／GaP（111）界面生长及其形成过程[J]. 福州大学学报(自然科学版), 1994, 0(1): 26-31 |
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| 作者姓名： | 黄春晖 王迅 |
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| 作者单位： | 福州大学电子科学与应用物理系，复旦大学应用表面物理实验室 |
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| 基金项目： | 复旦大学应用表面物理国家重点实验室的资助 |
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| 摘 要： | 研究用电子束蒸发方法把Ｓｉ淀积在ＧａＰ表面的界面生长过程。用ＸＰＳ在线测量Ｓｉ／ＧａＰ（１１１）界面形成过程中各原子芯能级的移动趋势来研究界面原子间的成键情况；借助Ｇａ３ｐ峰强随Ｓｉ覆盖厚度的变化确定Ｓｉ的生长模式。还用ＬＥＥＤ监测Ｓｉ生长时的表面结构状态。
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| 关 键 词： | 异质界面，电子束蒸发，界面形成，光电子能谱 |
Interface Growth and Formation of Si on GaP(111) |
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| Huang Chunhui. Interface Growth and Formation of Si on GaP(111)[J]. Journal of Fuzhou University(Natural Science Edition), 1994, 0(1): 26-31 |
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| Authors: | Huang Chunhui |
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| Abstract: | In this paper,the Si deposited on GaP(111) clean surface was carried out with a Si electron beam evaporation by homemade.Then the formative procedure of Si/GaP(111) was analysed in situ by XPS,in which the shift trendences of each atom-core levels was used to study about the bonding between the atoms.The Si growth mode was determined by the intensity of Ga3p Peak varying with the thickness of Si overlayer.Furthermore,the status of surface structure was monitored by LEED when Si deposited on the GaP(111)surface,The formative mechanism of Si/GaP(111) interface was understood furtherly by these results. |
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| Keywords: | heterointerface electron beam vaporation interface formation photo-electron spectra |
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