Sidewall Roughness对TSV互连结构高频性能的影响

本文详细分析了由Bosch 刻蚀形成的侧壁形貌的粗糙度（Sidewall Roughness）对硅通孔（TSV）互连结构高频性能的影响，并通过全波电磁场仿真软件HFSS将粗糙侧壁TSV互连结构与平滑侧壁TSV互连结构的传输特性进行了详尽的对比，仿真结果显示，在相同的条件下,粗糙侧壁TSV结构的插入损耗比光滑侧壁TSV结构增加了15%，并且随着侧壁形貌粗糙度的增加，TSV互连结构的高频性能恶化更加严重。最后，文章通过对二氧化硅绝缘层厚度和TSV直径对TSV互连结构高频性能的影响，提出了补偿侧壁粗糙度对高频性能产生的不良影响的方法,为TSV电学设计提供参考依据。

Influence of sidewall roughness on high frequency performance of TSV Interconnects

The scallops of TSV (through-silicon-via) sidewall, formed by Bosch process, are related to electrical signal loss characteristics. In this paper, the influence of sidewall roughness on high frequency performance of TSV interconnect is studied. Based on full-wave electromagnetic (EM) simulation, the high frequency performance of TSV interconnects can be improved by smoothening the sidewalls of the TSVs. And simulation results also indicate that it is effective to compensate the additional insertion loss caused by sidewall roughness by increasing the thickness of SiO2 insulator or decreasing the diameter of TSVs.