第三代半导体辐射探测器研究进展

 以氮化镓（GaN）、碳化硅（SiC）、金刚石等为代表的第三代半导体具有大的禁带宽度、高击穿电场、高饱和电子速率、高热导率以及具有高的位移阈能，耐高温、耐辐照能力，在核装置运行监测、空间探测、高能粒子物理探测等领域具有重要的应用潜力。介绍了第三代半导体的相关性质、辐射探测器主要制备方法以及不同类型辐射探测器的研究进展，展望了第三代半导体在辐射探测方面的发展趋势。提出第三代半导体辐射探测器的出现必然会促进核科学、空间探测、粒子及高能物理等方面的研究，对于国家提升核心竞争力具有重要的推动作用。

Research progress of the third generation semiconductor radiation detector

As representatives of the third generation semiconductor of the wide band gap, the gallium nitride, the silicon carbide and diamond with high breakdown electric field, high saturated electron rate, high heat conductivity and high displacement threshold, high temperature resistance, high radiation resistance, can be applied as the radiation detector in the space detection, the high energy particle physics, and other fields, with important potential applications. The properties of several third-generation semiconductors, the main preparation methods of the radiation detectors and the testing progress for different radiations are addressed emphatically, and the development trend of third-generation semiconductors in the radiation detection is also prospected. It is proposed that the emergence of the third generation semiconductor radiation detectors will promote the research of nuclear science, space exploration, particle and high energy physics, and play an important role in promoting the national core competitiveness.