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电弧离子镀技术中脉冲偏压对TiN薄膜的影响
引用本文:赵喜梅,王光平. 电弧离子镀技术中脉冲偏压对TiN薄膜的影响[J]. 河北师范大学学报(自然科学版), 2006, 30(5): 555-558
作者姓名:赵喜梅  王光平
作者单位:邢台学院,物理系,河北,邢台,054001;河北省教育考试院,信息办公室,河北,石家庄,050091
基金项目:河北省教育厅自然科学基金
摘    要:用正交设计实验研究了电弧离子镀技术中采用脉冲偏压以后各种参数对沉积TiN薄膜性能的影响.研究表明,与直流偏压相比,直流叠加脉冲偏压能更好地细化颗粒,降低薄膜的表面粗糙度,提高沉积速率.对实验结果的方差分析显示:气氛和频率是降低表面粗糙度、提高沉积速率的主要因素.

关 键 词:电弧离子镀  脉冲偏压  正交设计
文章编号:1000-5854(2006)05-0555-04
收稿时间:2005-11-22
修稿时间:2005-11-22

Effects of Pulse Bias on TiN Coating in Arc Ion Plating
ZHAO Xi-mei,WANG Guang-ping. Effects of Pulse Bias on TiN Coating in Arc Ion Plating[J]. Journal of Hebei Normal University, 2006, 30(5): 555-558
Authors:ZHAO Xi-mei  WANG Guang-ping
Affiliation:1. Department of Physics,Xingtai College,Hebei Xingtai 054001 ,China; 2. Information Office,Hebei Education Examination Academy,Hebei Shijiazhuang 050091,China
Abstract:Orthogonal designs are used to investigate the effect of various parameters on TiN coating in arc ion plating techniques when pulse bias is imposed.It is shown that particles become smaller,the film roughness is low and the deposition rate is high with(d.c.+pulse) bias.The experiment results,show that pressure and frequency are the main factors of lower surface roughness and higher deposition rate.
Keywords:arc ion plating   pulse bias   orthogonal design
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