| 晶体管超相移因子的探讨 |
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| 引用本文： | 关培勋.晶体管超相移因子的探讨[J].华南理工大学学报(自然科学版),1995,23(12):46-50. |
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| 作者姓名： | 关培勋 |
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| 作者单位： | 华南理工大学应用物理系 |
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| 摘 要： | 通过对均匀基区晶体管求解连续方程推算出基区输运系数，从而直接求得晶体管的超相移因子结果表明，超相移因子并不是由基区载流子热弛豫时间决定的因子，而仅是基区载流子电荷存储效应导致的相移的一部分。
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| 关 键 词： | 超相移因子 基区输运系数 热弛豫时间 晶体管 |
APPROACH TO ULTRA PHASE-SHIFTING FACTOR OF TRANSISTOR |
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| Guan Peixun.APPROACH TO ULTRA PHASE-SHIFTING FACTOR OF TRANSISTOR[J].Journal of South China University of Technology(Natural Science Edition),1995,23(12):46-50. |
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| Authors: | Guan Peixun |
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| Abstract: | In this paper, base transport farctor is calculated by solving continuity equation for even base transistor. It follows that ultra phase-shifting factor of the transistor can be shown directly. The results show that ultra phase-shifting factor is only part of phaseshifting caused by charge storage effects of base carriers, and is not factor decided by thermal relaxation time of base carriers. |
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| Keywords: | ultra phase-shifting factor base transport factor thermal relaxation time |
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