| Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering |
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| 作者姓名： | LI Shitao QIAO Xueliang CHEN Jianguo JIA Fang WU Changle |
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| 作者单位： | State Key Laboratory of Plastic Forming Simulation and Die ＆ Mould Technology, Huazhong University of Science and Technology, Wuhan430074, China |
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| 摘 要： | Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400 ℃ ）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T are amorphous at the temperature ranging from 1, the crystalline seeds appear at T1 = 300℃, and the films 27 ℃ to 400 ℃.
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| 关 键 词： | 铟锡氧化物薄膜 微观结构 射频磁控管溅射法 光电解性能 折射率 |
Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering |
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| LI Shitao QIAO Xueliang CHEN Jianguo JIA Fang WU Changle.Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering[J].Journal of University of Science and Technology Beijing,2006,28(8):743-743. |
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| Authors: | LI;Shitao;QIAO;Xueliang;CHEN;Jianguo;JIA;Fang;WU;Changle |
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| Abstract: | |
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| Keywords: | indium-tin oxide (ITO) photoelectrolytic properties RF-magnetron sputtering IR irradiation temperature microstructure refractive index |
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