低功耗肖特基整流器件用200mm高均匀性硅外延层生长工艺研究

200 mm硅外延片是肖特基器件的关键支撑材料，但是大尺寸硅外延层生长面临反应面积大，易受热流场扰动影响的问题，导致采用传统外延工艺始终未实现预期目标。本文利用Centura外延炉，在200 mm的硅单晶衬底上化学气相沉积(CVD)了结晶质量良好且高均匀性的外延层，外延层厚度不均匀性<1.0 %，电阻率不均匀性<1.1 %，无滑移线、雾等缺陷。实验利用光学显微镜、傅里叶变换红外光谱仪(FT-IR)、汞探针电容-电压测试仪(Hg-CV)等测试设备分别研究了外延层的表面形貌、厚度和电阻率等参数。通过精确调节外延炉内的热场和流场分布，结合设计附面层杂质稀释、基座浅层包硅等技术，解决了参数一致性与稳定性问题，实现了高质量200 mm的硅外延层。

Study on Growth Process of 200mm High Uniformity Silicon Epitaxial Layer for Low Power Schottky Rectifier

The 200 mm silicon epitaxial wafer is a key supporting material for Schottky rectifier. However, the growth of large-sized silicon epitaxial layer is faced with a large reaction area and is susceptible to thermal field and flow field disturbance, resulting in the failure to achieve the desired target by the conventional epitaxial process. In this paper, a Centura epitaxial furnace was used to chemically vapor deposit (CVD) epitaxial layers with good crystal quality and high uniformity on a 200 mm silicon single crystal substrate. The thickness non-uniformity of the epitaxial layer was <1.0%, and the resistivity non-uniformity was < 1.1%, and no slip line, haze and other defects.. The surface morphology, thickness and resistivity of the epitaxial layer was studied by optical microscope, Fourier transform infrared spectroscopy (FT-IR) and mercury probe capacitance-voltage tester (Hg-CV), respectively. By precisely adjusting the thermal field and flow field distribution in the epitaxial furnace, combined with the design of the boundary layer impurity dilution, pedestal shallow silicon coating technology, the parameters consistency and stability problems were solved, and the high quality of the 200 mm epitaxial layer is realized