| 不同功率激光激发下多孔硅拉曼光谱研究 |
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| 引用本文： | 兰燕娜,方靖淮.不同功率激光激发下多孔硅拉曼光谱研究[J].湘潭大学自然科学学报,2011,33(2):94-98. |
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| 作者姓名： | 兰燕娜 方靖淮 |
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| 作者单位： | 南通大学理学院; |
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| 基金项目： | 国家自然科学基金项目(30970754); 南通大学自然科学研究项目(10Z005) |
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| 摘 要： | 利用阳极氧化化学腐蚀法得到多孔硅样品,在632.8 nm激光激发下,对多孔硅的拉曼光谱随激光功率的变化进行了研究,分别得到了520cm-1和300 cm-1附近的拉曼光谱图.发现在520 cm-1附近,激光功率较低时,多孔硅的拉曼光谱主要表现为略低于520cm-1的尖锐单峰,随激光功率的增大,拉曼峰出现红移和不对称展宽...
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| 关 键 词： | 多孔硅 拉曼光谱 激光功率 |
Study on Raman Spectra of Porous Silicon with Different Excitationpower |
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| LAN Yan-na,FANG Jing-huai.Study on Raman Spectra of Porous Silicon with Different Excitationpower[J].Natural Science Journal of Xiangtan University,2011,33(2):94-98. |
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| Authors: | LAN Yan-na FANG Jing-huai |
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| Institution: | LAN Yan-na,FANG Jing-huai*(School of Science,Nantong University,Nantong 226007 China) |
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| Abstract: | Porous Silicon(PS) sample is prepared by anodization.Raman spectra of porous silicon with different laser power have been studied.Only a sharp single band near 520 cm-1 appears when the exciting laser power is low,while it shifts to the red side and shows dissymmetrical broadening with the increase of the laser power.When the laser power gets strong enough,the Raman peak near 520 cm-1 is splitted into two bands The band near 300 cm-1 also shifts to lower wavenumbers with increasing the laser power.However,n... |
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| Keywords: | porous silicon raman spectroscopy laser power |
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