| PTCR陶瓷材料的半导化及显微组织的研究 |
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| 引用本文： | 蔡莉,王应民.PTCR陶瓷材料的半导化及显微组织的研究[J].江西科学,2001,19(4):211-213. |
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| 作者姓名： | 蔡莉 王应民 |
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| 作者单位： | 1. 江西省科学院,
2. 南昌航空工业学院, |
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| 摘 要： | 研究了PTCR陶瓷半导化过程。使用sol-gel法合成（Ba0.8Sr0.2)TiO3超细微粉，掺入钇元素及烧结助剂，在合理的温度制度下浇成PTCR陶瓷。为跟踪陶瓷半导化过程，在不同温度阶段冷却陶瓷样品和在升温阶段不同温度点冷却陶瓷样品，利用SEM、XRD进行分析陶瓷的结构，利用交流阻抗仪分析陶瓷施主浓度，结果表明PTCR陶瓷半导化仅与升温阶段有关。
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| 关 键 词： | PTCR陶瓷 半导化 显微结构 功能材料 升温阶段 制备工艺 施主农度 |
| 文章编号： | 1001-3679(2001)04-0211-03 |
| 修稿时间： | 2001年8月1日 |
Studies on Semi-Conductive Process and Microstructure of PTCR Material |
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| CAI Li ,WANG Ying_min.Studies on Semi-Conductive Process and Microstructure of PTCR Material[J].Jiangxi Science,2001,19(4):211-213. |
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| Authors: | CAI Li WANG Ying_min |
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| Institution: | CAI Li 1,WANG Ying_min 2 |
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| Abstract: | Semi-conductive process of PTCR ceramics has been studied. Sintered in proper firing procedure, PTCR material is abtained by doping addition and yttrium donor into ultra-fine powder of (Ba 0.8 ,Sr 0.2 )TiO 3 prepared by method of sol-gel. Quenched ceramics picked from different stage and different temperature at same raising stage are analysed by SEM, XRD and impedance analyzer(Hp 4192A LF).It indicats that semi-conductive process of PTCR material only has a relation to the stage of raising temperature. |
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| Keywords: | PTCR ceramics Semi-conductive Microstructure |
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