| 原子集团展开和平均键能方法在In_xGa_（1－x）As／GaAs系统中的应用 |
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| 引用本文： | 柯三黄,王仁智,黄美纯.原子集团展开和平均键能方法在In_xGa_（1－x）As／GaAs系统中的应用[J].厦门大学学报(自然科学版),1996(2). |
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| 作者姓名： | 柯三黄 王仁智 黄美纯 |
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| 基金项目： | 国家自然科学基金,福建省自然科学基金 |
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| 摘 要： | 把原子集团展开方法同平均键能方法相结合，建立了一种研究合金型应变层异质界面价带偏移的方法．应用此方法对ＩｎｘＧａ１－ｘＡｓ／ＧａＡｓ系统分别计算了以ＧａＡｓ和以ＩｎｘＧａ１－ｘＡｓ为衬底的两种不同的应变状态下的价带偏移（△Ｅｖ）随合金组份的变化规律．结果表明，由于应变的引入，该系统的面△Ｅｖ～Ｘ表现出大的非线性，且这一关系受到应变状态的显著影响．通过改变应变状态可使其为Ⅰ型或Ⅱ型超晶格以及金属．部分结果与有关的实验值和理论结果相符合．
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| 关 键 词： | 价带偏移，应变层超晶格，混晶 |
Application of Cluster Expansion and Average-bond-energy Method to In_x.Ga_(1-x)As/GaAs System |
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| Ke Sanhuang,Wang Renzhi,Huang Meichun.Application of Cluster Expansion and Average-bond-energy Method to In_x.Ga_(1-x)As/GaAs System[J].Journal of Xiamen University(Natural Science),1996(2). |
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| Authors: | Ke Sanhuang Wang Renzhi Huang Meichun |
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| Institution: | Dept. of Phys. |
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| Abstract: | A theoretical method for determining the valence-band offset (VBO) at strained alloy type heterojunctions is presented by combining the cluster expansion method and average-bond-energy method. Adopting this method; the VBO at InxGa1-xAs/GaAs system as a function of the alloy composition x is determined for two different strain conditions. It is shown that this variaton is in large nonlinearity due to the introduction of the elastic strain; and is exceedingly modulated by the strain condition. Present results are consistent to relevant theoretical and experimental data. |
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| Keywords: | valence-band offset Strained-layer superiattices Alloy |
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