半导体量子点中磁极化子基态能修正的温度效应

采用Larsen方法研究了半导体量子点中磁极化子基态能量的温度效应．在有限温度下导出了磁场内半导体量子点中电子—体纵光学(LO)声子相互作用系统的基态能量及二级微扰能量修正．讨论了磁场、量子点尺寸以及温度对半导体量子点中电子—体纵光学(LO)声子相互耦合磁极化子的基态能量影响．为了更清楚、直观地说明半导体量子点中磁极化子的性质，以GaAs半导体为例进行了数值计算，得到在强磁场的作用下半导体量子点中电子—体纵光学(LO)声子耦合系统的基态能量修正与磁场强度、量子点厚度及温度的关系曲线．结果表明：强磁场中电子—体纵光学(LO)声子相互耦合磁极化子的基态能量修正随磁场强度的增加而增大，随量子点厚度的增加而减少，随温度的升高而增大。

Temperature Dependence of the Ground State Energy of a Magnetopolaron in Semiconductor Quantum Dots

The temperature dependence of the ground state energy of a magnetopolaron in semiconductor quantum dots were studied by using Larsen's method.The ground state energy and second-order perturbation energy of magnetopolaron in the electron-bulk longitudinal optical(LO) phonon sysytem in semiconductor quantum dots were derived,respectively.The effects of the magnetic field on the ground state energy of magnetopolaron of the electron-LO phonon system in semiconductor quantum dots,the influence of size of quantum dots on the electron-LO phonon interaction system in semiconductor quantum dots and in strong magnetic field,the temperature dependence of the ground state energy of the electron-LO phonon coupling polaron in semiconductor quantum dots were discussed.To show more clearly and directly the properties of magnetopolaron in semiconductor quantum dots.Numerical calculation for a GaAs semiconductor,as an example,were performed,and the relational curve between the perturbation ground state energy of the electron-LO phonon coupling system in semiconductor quantum dot with the magnetic field strength,the size of quantum dots and the temperature are obtained.The results illustrated that in strong magnetic field the ground state energy of the magnetopolaron in semiconductor quantum dots will increase with the increasing magnetic field strength B and temperature and decrease with the increasing thickness of the quantum dots.