| 高亮度InGaAlP DHLED结构设计的研究 |
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| 引用本文： | 文尚胜,范广涵,廖常俊,刘颂豪. 高亮度InGaAlP DHLED结构设计的研究[J]. 华南师范大学学报(自然科学版), 2000, 0(2) |
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| 作者姓名： | 文尚胜 范广涵 廖常俊 刘颂豪 |
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| 作者单位： | 华南师范大学量子电子研究所!广州510631，华南理工大学应用物理学系广州510641，华南师范大学量子电子研究所!广州510631，华南师范大学量子电子研究所!广州510631，华南师范大学量子电子研究所!广州510631 |
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| 基金项目： | 广州市科委重大科技攻关项目![(JB0 2 ) 1999- Z- 0 35 - 0 1) ] |
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| 摘 要： | InGaAlP双异质结LED结构设计的目的在于减少器件的光、电、热损耗 本文分析各层成分、层厚度、掺杂浓度以及有关的辅助技术 ,例如厚电流扩展层、电流隔离层、布拉格反射层、金属电镀反射层、透明衬底等对LED性能的影响 ,提出一个性能优良的高亮度LED应具有的结构模式
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| 关 键 词： | InGaAlP 高亮度发光二级管 双异质结 |
RESEARCH OF STRUCTURAL DESIGN FOR InGaAlP HIGH BRIGHTNESS DOUBLE HETEROJUNCTION LED |
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| WEN Shang-sheng ,) FAN Guang-han ) LIAO Chang-jun ) LIU Song-hao ) ) Institute of Quantum Electronics,South China Normal University,Guangzhou ,China ) Deptartment of Applied Physics,South China University of Tec. RESEARCH OF STRUCTURAL DESIGN FOR InGaAlP HIGH BRIGHTNESS DOUBLE HETEROJUNCTION LED[J]. Journal of South China Normal University(Natural Science Edition), 2000, 0(2) |
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| Authors: | WEN Shang-sheng ) FAN Guang-han ) LIAO Chang-jun ) LIU Song-hao ) ) Institute of Quantum Electronics South China Normal University Guangzhou China ) Deptartment of Applied Physics South China University of Tec |
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| Affiliation: | WEN Shang-sheng 1,2) FAN Guang-han 1) LIAO Chang-jun 1) LIU Song-hao 1) 1) Institute of Quantum Electronics,South China Normal University,Guangzhou 510631,China 2) Deptartment of Applied Physics,South China University of Tec |
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| Abstract: | The aim of the structural design for InGaAIP heterojunction LED is to decrease the optical, electrical and thermal losses of instruments. Effects of these factors are discussed, such as layer component, layer thickness, doping concentration and some other related measurements. A structural model for the fine performance HB LED is proposed. |
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| Keywords: | InGaAlP HB-LED double heterojunction. |
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