MoS2单晶薄膜的制备及生长机制研究

通过研究二维MoS₂薄膜的制备工艺参数以及生长规律，为过渡金属硫化物薄膜的制备工艺提供技术经验。采用化学气相沉积法，以MoO₃和S粉为前驱体，通过调控载气流速、保温时间和MoO₃的质量，制备一系列MoS₂薄膜。利用光学显微镜、拉曼光谱仪、光致发光光谱仪、原子力显微镜等测试设备对MoS₂薄膜的层数和结构进行表征；分析了工艺参数对MoS₂薄膜的影响，探索了中心成核的生长机制。结果表明，在载气流速为110 mL/min、保温时间为10 min、MoO₃的质量为2.5 mg的条件下，得到的MoS₂薄膜最优。同一衬底上存在不同厚度的连续的MoS₂薄膜。通过控制前驱体的比例和适当的工艺参数可以制备长度为100 μm甚至更大尺寸的单层MoS₂薄膜。

Research on the preparation and growth mechanism of MoS2 single crystal films

The process parameters and growth law of two-dimensional MoS₂ films were studied to provide technical experience for the synthesis process of transition metal sulfide thin films. Using chemical vapor deposition method with MoO₃ and S powders as precursors, a series of MoS₂ thin films were prepared by adjusting the carrier gas flow rate, holding time, and MoO₃ mass. The layer number and structure of MoS₂ films were characterized by optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, and other test devices. The effects of process parameters on MoS₂ thin films were studied, and the growing mechanism of core nucleation were explored. The results show that the optimal MoS₂ films are obtained under the conditions including a carrier gas flow rate of 110 mL/min, holding time of 10 min, and MoO₃ mass of 2.5 mg. There are continuous MoS₂ thin films with different thicknesses on the same substrate. Monolayer MoS₂ films with length of 100 μm or more can be prepared by controlling the ratio of precursors and appropriate process parameters.