| In1-xGaxN/Si异质结太阳能电池的光伏特性研究 |
| |
| 引用本文： | 董少光. In1-xGaxN/Si异质结太阳能电池的光伏特性研究[J]. 佛山科学技术学院学报(自然科学版), 2007, 25(4): 1-5 |
| |
| 作者姓名： | 董少光 |
| |
| 作者单位： | 佛山科学技术学院,光电子与物理学系,广东,佛山,528000 |
| |
| 基金项目： | 广州市LED工业研究开发基地项目，香港健隆投资有限公司研发资助项目 |
| |
| 摘 要： | 通过器件模拟对n-In1-xGaxN/p-Si异质结的光伏特性进行了研究,并与c-Si同质结薄膜电池的性能作了比较。研究表明:在AM1.5的光照条件下,n-IGN/p-Si异质结在最佳的电池设计、最佳的材料和最佳的操作参数条件下获得的电池效率达到了27%。电池效率受到薄膜质量的强烈影响,从电子亲和势、多数载流子的迁移率、少数载流子的寿命、薄膜厚度以及掺杂水平的变化可以得到说明。
|
| 关 键 词： | 太阳能电池 InGaN 光伏特性 光致发光 |
| 文章编号： | 1008-0171（2007）04-0001-05 |
| 修稿时间： | 2007-03-26 |
Photovoltaic properties of In1-xGaxN/Si heterojunction solar cells |
| |
| DONG Shao-guang. Photovoltaic properties of In1-xGaxN/Si heterojunction solar cells[J]. Journal of Foshan University(Natural Science Edition), 2007, 25(4): 1-5 |
| |
| Authors: | DONG Shao-guang |
| |
| Affiliation: | (Department of Optoelectronic and Physics, Foshan University, Foshan 528000, China |
| |
| Abstract: | Photovoltaic properties of n-In1-xGaxN/p-Si hetero-junction have been studied by device simulation,and are compared with the performance of c-Si homo-junction thin film cells.Best achievable cell efficiency under AM1.5 illumination condition was 27% for n-IGN/p-Si hetero-junction,on the condition of optimum cell design,materials and operation parameters.The cell efficiency is strongly affected by film quality,which can be accountable by variation of electron affinity,majority carrier mobility,minority carrier lifetime,film thickness and doping levels. |
| |
| Keywords: | solar cells InGaN photovoltaic properties photoluminescence |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
