Structures and magnetic properties of Fe-Si-O films RF-sputtered in a high magnetic field |
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Authors: | Haili Bai S. Mitani Zhongjie Wang H. Fujimori M. Motokawa |
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Affiliation: | (1)Department of Applied Physics, Tianjin University, ,Tianjin 300072 ,China; (2)CREST; (3)Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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Abstract: | We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratioV O2/V total<1.0%, magnetic fieldB appl⩽1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic field. In the oxygen-argon flow ratioV O2/V total>2.0%, magnetic fieldB appl⩾2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition. |
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Keywords: | RF sputtering high magnetic fields orientation effects magnetic films |
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