典型模拟电路性能退化仿真技术研究

为解决典型模拟电路在设计阶段可能引入的性能退化问题，通过分析国内外电路虚拟验证技术研究进 展，并针对引起模拟电路性能退化的HCI( Hot Carrier Induced) 、NBTI( Negative Bias Temperature Instability) 、 TDDB( Time Dependent Dielectric Breakdoun) 等机理模型进行深入研究，开展了性能退化仿真流程模型设计、 失效物理模型推导建立及模型参数提取3 项关键工作。基于上述关键技术研究，选取典型模拟运算放大器， 采用Cadence spectre 软件开展了性能退化仿真研究。最终得出器件在25 ℃下，工作2 年和10 年后的性能退化 情况，验证了该仿真方法的可行性。该结论可在模拟电路设计阶段，为其设计改进工作提供初步支撑。

Research on Simulation Technology of Typical Analog Circuit Performance Degradation

In order to solve the performance degradation problem that may be introduced by typical analog circuits in the design stage，the research progress of circuit virtual verification technology is analyzed at home and abroad，the mechanism models such as HCI ( Hot Carrier Induced ) ，NBTI ( Negative Bias Temperature Instability) and TDDB ( Time Dependent Dielectric Breakdoun) which cause the performance degradation of analog circuits are deeply studied． Furthermore，three key tasks are carried out which contains the design of performance degradation simulation process model，the derivation of the failure physical model and the extraction of model parameters． Based on the research，a typical analog operational amplifier is selected to simulation the performance degradation by Cadence spectre software． The performance degradation of the device proves that the proposed simulation method is feasible at 25 ℃ after two years and ten years of operation． This conclusion can provide preliminary support information for the improvement design work in the design stage of the analog circuit．