掺杂氧化锌薄膜的结构与刻蚀性能研究

本文利用中频反应磁控溅射方法，以Zn/Al (98 : 2) (wt. %)合金靶为靶材，制备了综合性能优良的铝掺杂氧化锌（ZnO:Al, AZO）透明导电薄膜. 研究了沉积工艺对薄膜结构、电学及光学性能的影响，分析了AZO薄膜的刻蚀性能以及所制备的绒面结构特性. 结果表明：基体温度对薄膜生长有较大的影响，当温度为150℃时，薄膜具有较好的晶化率，晶粒呈明显的柱状生长，晶界间结合紧密，薄膜的电阻率为4.6×10-4Ωcm. 镀膜时基体的移动速度会影响薄膜的晶体生长方式，但对其沉积速率影响不大. 具有择优生长特性、形成柱状晶组织的薄膜经稀盐酸腐蚀后，其表面呈规则的粗糙形貌；此结构有利于充分捕集太阳光，从而提高薄膜太阳电池的效率.

Study on the structural properties and the etching behavior of Al-doped zinc oxide thin film

Aluminum-doped zinc oxide (ZnO:Al or AZO) thin films have been fabricated by reactive mid-frequency (MF) magnetron sputtering from Zn/Al metallic targets (Al: 2wt.%) with a dual magnetron configuration. The influence of deposition parameters on structural, electrical and optical properties of AZO films are investigated. The etching behaviour of the deposited films is studied as well. It is found that the substrate temperature plays a significant role on the structure and properties of the films. The films with good crystallinity and tightly packed columnar structure was obtained at the substrate temperature of 150 ℃, which had a minimum resistivity of 4.6×10-4Ωcm. The effect of the substrate moving speed on the films growth was obviously shown. However, no significant change in the deposition rate was observed. Thefilm with highly crystalline texture and columnar structure showed a regular rough morphology after etched in diluted HCl, which benefits an effective light trapping to meet the demand of thin film solar cell.