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KHg4InSe6的固相合成和性能研究
引用本文:冯秀玲,张丽丹.KHg4InSe6的固相合成和性能研究[J].北京化工大学学报(自然科学版),2004,31(1):57-59.
作者姓名:冯秀玲  张丽丹
作者单位:北京化工大学理学院,北京,100029
摘    要:采用反应性熔盐法,在550 ℃下合成KHg4InSe6.用扫描电子显微镜(SEM)观察了该晶体的表观结构,该晶体为片状晶体.采用EPM-810Q电子探针显微分析仪对产物晶体进行元素定性定量测定,经EDS分析确定了化合物的原子数比为NK∶NHg∶NIn∶NSe≈1∶4∶1∶6,并用X射线粉末衍射(XRD)证实该化合物为新晶体.经差热分析,该晶体在300 ℃以下是稳定的.晶体的光吸收特性表明,该晶体具有0.5 eV的能隙,属于半导体.

关 键 词:KHg4InSe6  反应性熔盐法  热稳定性  X射线衍射  漫反射光谱  KHg4InSe6  反应性熔盐法  热稳定性  X射线衍射  漫反射光谱
收稿时间:2003-05-30
修稿时间:2003年5月30日

Solid-state synthesis of KHg4InSe6 and its properties
Feng Xiu-ling,Zhang Li-dan.Solid-state synthesis of KHg4InSe6 and its properties[J].Journal of Beijing University of Chemical Technology,2004,31(1):57-59.
Authors:Feng Xiu-ling  Zhang Li-dan
Institution:College of science, Beijing University of Chemical Technology, Beijing 100029, China
Abstract:A new compound KHg4InSe6 was synthesized at 550℃ by means of a solid reactive flux method.The compound was found to be lamellar by SEM. EPM-810Q electron probe microanalyser was used for the qualitative and quantitive elemental analysis of the single crystal. The crystal was indentified to be new by EDS showing a molar ratio NK∶NHg∶NIn∶NSe≈1∶4∶1∶6. The new crystal was further indentified by powder X-ray differaction experiment. The thermal stablility and light absorbablity of the compound were also investigated by using differential thermal anlysis and diffuse reflective spectra techniques. The experimental results show that the compound can be thermally stable below 300℃ and it is a kind of semiconductor with an energy gap of 0.5eV.
Keywords:KHg4InSe6  reactive flux method  thermal stability  X-ray diffraction  diffuse reflective spectra
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