|
|||||
|
|
Point defects in active layers of TFEL devices based on ZnS |
|
| Authors: | Zhidong Lou A. N. Georgobiani Zheng Xu Chunxiang Xu Feng Teng Lei Yu Xurong Xu |
| Affiliation: | (1) Applied Physics Department, Tianjin University, 300072 Tianjin, China;(2) P.N.Lebedev Physical Institute, Russian Academy of Sciences, 117924 Moscow, Russian;(3) Physics Department, Northern Jiaotong University, 100044 Beijing, China;(4) Institute of Material Physics, Tianjin Institute of Technology, 300191 Tianjin, China;(5) Laboratory of Excited State Processes, Changchun Institute of Physics, Chinese Academy of Sciences, 130021 Changchun, China |
| Abstract: | Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS; Er3+ were studied. The results indicate that besides Er3+ substituting for Zn2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed. |
| Keywords: | spectra of photoluminescence point defects thin film electroluminescence |
| 本文献已被 SpringerLink 等数据库收录！ | |
| 点击此处可从《科学通报(英文版)》浏览原始摘要信息 | |
| 点击此处可从《科学通报(英文版)》下载全文 | |