| 金刚石薄膜绝缘电阻的时间效应与表面处理 |
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| 引用本文： | 张志明,张伟东.金刚石薄膜绝缘电阻的时间效应与表面处理[J].上海交通大学学报,1995,29(4):167-170. |
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| 作者姓名： | 张志明 张伟东 |
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| 摘 要： | 本文研究了常规热丝ＣＶＤ法生长的金刚石薄膜的绝缘电阻特性，发现薄膜从反应取出后其电阻会随时间降低至某一稳定值（时间效应）。用浓硫酸和双氧水的混合液、或氩等离子体对薄膜进行表面处理，可以提高电阻５￣６个数量级，且不再随时间变化；而氩气气氛下的加热处理效果不大。文中还提出了产生电阻时间效应的原因和提高薄膜绝缘电阻的方法。
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| 关 键 词： | 金刚石薄膜 电阻 时间效应 表面处理 |
Time Effect of Resistance and Surface Treatment of Diamond Films |
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| Zhang Zhiming,Zhang Weidong,Cai Qiyu,Ding Zhengming,Li Shenghua.Time Effect of Resistance and Surface Treatment of Diamond Films[J].Journal of Shanghai Jiaotong University,1995,29(4):167-170. |
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| Authors: | Zhang Zhiming Zhang Weidong Cai Qiyu Ding Zhengming Li Shenghua |
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| Institution: | Zhang Zhiming;Zhang Weidong;Cai Qiyu;Ding Zhengming;Li Shenghua |
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| Abstract: | The dielectric resistance of diamond films grown with the normal hot-filamentchemical vapour deposition method was investigated. It was found that the film resistancedecreased to a definite value with time when it was taken out from the reaction chamber(time effect). The surface treatment of the mixing solution of H2SO4+H2O2 or of argon microwave plasma can raise film resistance to 5 or 6 orders of magnitude, and then the resistance keeps stable with time. However, the annealing in argon has little effect on film resistance. The mechanism of time effect of resistance is discussed in this paper. |
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| Keywords: | diamong films resistance time effect surface treatment |
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