| C轴倾斜AlN薄膜的制备研究 |
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| 引用本文： | 杜鹏飞,熊娟,吴雯,谢红,顾豪爽.C轴倾斜AlN薄膜的制备研究[J].湖北大学学报(自然科学版),2011,33(4):483-485. |
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| 作者姓名： | 杜鹏飞 熊娟 吴雯 谢红 顾豪爽 |
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| 作者单位： | 湖北大学物理学与电子技术学院,湖北武汉,430062 |
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| 摘 要： | 采用射频磁控反应溅射,利用两步气压法在Pt电极上制备C轴倾斜的AlN压电薄膜.用X射线衍射仪(XRD)分析两步气压下制备的AlN薄膜的择优取向,用扫描电镜(SEM)观察薄膜的截面形貌.实验结果表明在优化工艺参数条件下制备的AlN薄膜为C轴倾斜的柱状晶,且柱状晶与C轴的倾斜角度达到5°.并且初步探讨两步气压法制备C轴倾斜...
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| 关 键 词： | C轴倾斜 AlN薄膜 两步气压法 |
Fabrication and characterization of C-axis inclined AlN thin film |
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| DU Pengfei
,
XIONG Juan
,
WU Wen
,
XIE Hong
,
GU Haoshuang.Fabrication and characterization of C-axis inclined AlN thin film[J].Journal of Hubei University(Natural Science Edition),2011,33(4):483-485. |
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| Authors: | DU Pengfei XIONG Juan WU Wen XIE Hong GU Haoshuang |
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| Institution: | (School of Physics and Electronic Technology,Hubei University,Wuhan 430062,China) |
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| Abstract: | C-axis inclined AlN piezoelectric films based on Pt electrode were prepared by two-step pressure method in RF magnetron sputtering system.The preferred orientation and cross-section morphology of the AlN films prepared under different conditions were characterized by X-ray diffraction（XRD） and scanning electron microscopy（SEM） respectively.The results showed that the high C-axis inclined AlN films prepared under optimized parameters had inclined columnar structure up to 5°.The growth mechanism of C-axis inclined AlN films under two-step pressure method was discussed. |
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| Keywords: | C-axis inclined AlN film two-step pressure method |
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