| 掺铒硫化锌ACTFEL中深能级的测定 |
| |
| 引用本文： | 陈振湘,孙书农,刘瑞堂. 掺铒硫化锌ACTFEL中深能级的测定[J]. 厦门大学学报(自然科学版), 1988, 0(1) |
| |
| 作者姓名： | 陈振湘 孙书农 刘瑞堂 |
| |
| 作者单位： | 厦门大学物理学系(陈振湘，孙书农)，厦门大学物理学系(刘瑞堂) |
| |
| 摘 要： | 采用热激电流(TSC)法,在180-430K温度内对三种不同结构的ZnS:Er~(3+)交流薄膜电致发光(ACTFEL)样品,测得三个热激电流峰.经分析认为它们对应于ZnS:Er~(3+)层体内,ZnS:Er~(3+) Y_2O_3和ZnS:Er~(3+)-SnO_2界面处存在的不同深度的陷阱能级.估算其位置和密度,并讨论了实验结果.
|
Determination of Deep Centers in ZnS:Er~(3+) ACTFEL |
| |
| Chen Zhenxiang Sun Shunong Liu Ruitang. Determination of Deep Centers in ZnS:Er~(3+) ACTFEL[J]. Journal of Xiamen University(Natural Science), 1988, 0(1) |
| |
| Authors: | Chen Zhenxiang Sun Shunong Liu Ruitang |
| |
| Abstract: | In this report, three thermally stimulated current (ISC) peaks have been observed in the temperature range 80K to 430K for three ZnS : Er3+ AC electroluminescent thin film (ACTFEL) samples with different structures It was concluded that there are three deep centers with different trap depths in the ZnS : Er3+ bulk layer, corresponding to the interface between ZnS : Er3+ and Y2O3 or between ZnS : Er3 + and SnQ2. Their Positions and densities have been estimated, and the related effects are also discussed. |
| |
| Keywords: | Electroluminescent Thermally stimulated current Deep centers |
| 本文献已被 CNKI 等数据库收录！ |
