ZnO薄膜的射频磁控溅射法制备及特性

利用射频磁控溅射镀膜工艺，在石英玻璃衬底上成功制备了ZnO薄膜．采用原子力显微镜、X射线衍射、拉曼光谱、荧光分光光度计及椭偏等检测手段对其特性进行了测试、分析．研究结果表明：该薄膜具有良好的C轴取向结晶度；最佳激发波长为265．00nnl，光致发光峰分别位于362．00、421．06和486．06nm；437cm^-1是ZnO晶体的特征拉曼峰，该峰的出现与最强的X射线衍射(002)峰相对应；薄膜折射率为2．01．

Preparation of ZnO thin films by RF magnetron sputtering and their properties

ZnO thin films with prominent c-orientation are successfully fabricated by RF magnetron sputtering on silica glass substrate at room temperature. Atomic Force Microscope(AFM), X-ray Diffraction, Raman spectrum, Fluorescence Spectrophotometer, Ellipsometer, etc. are adopted in studying their properties. The results show that the As-grown thin films exhibit excellent C axis orientation even without annealing treatment; the optimal excitation wavelength locates about 265.00 nm, emission peak wavelength locates 362.00 nm, 421.06 nm, 486.06 nm, respectively; their refractive index is about 2.01.