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极性半导体中通过形变势表面极化子
引用本文:赵翠兰,丁朝华,肖景林. 极性半导体中通过形变势表面极化子[J]. 内蒙古民族大学学报(自然科学版), 1997, 0(2)
作者姓名:赵翠兰  丁朝华  肖景林
摘    要:有不少的极性半导体,电子与表面光学(SO)声子耦会强,但与表面声学(SA)声子耦会弱。本文采用线性组合算符方法,导出了极性半导体中通过形变势表面极化子的有效哈密顿量。并对两种限情形进行了讨论。

关 键 词:极性半导体  形变势  表面极化子  有效哈密顿量

Surface Polaron Via Deformation Potential in Polar Semiconductor
Zhao Cuilan, Ding Zhaohua, Xiao Jinglin. Surface Polaron Via Deformation Potential in Polar Semiconductor[J]. Journal of Inner Mongolia University for the Nationalities(Natural Sciences), 1997, 0(2)
Authors:Zhao Cuilan   Ding Zhaohua   Xiao Jinglin
Affiliation:Zhao Cuilan; Ding Zhaohua; Xiao Jinglin
Abstract:There is weak coupling between the electron and SA phonon but strong couplingbetween the electron and So phonon for many polar semiconductor. In this paper, an effectiveHamiltonian of the surface polaron via deformation potential is derived by using linea combinationoperator method. Two Limiting cases are discussed.
Keywords:polar semiconductor  defomation potontial surface polaron  effective Hamiltonian  
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