|
|||||
|
|
| 硅、锗中硼、磷杂质的振动特性 | |
| 摘 要： | 本文用六原子模型．分析丁硼、磷原子在硅、锗半导体中刃位错附近的三维振动特性． |
| 关 键 词： | 位错，矩阵方程，特征值 |
The Vibration Property of Boron or Phosphrus as Impurity in Solicon or Germanium |
|
| Authors: | Fan Liru Ouyang Wu |
| Institution: | Dept. of Basic Set. |
| Abstract: | This paper analyzed the property of atom of boron and phosphorus vibrating in three dimesions near the edge dislocation in semiconductor of silicon or germanium with model of six-atoms. |
| Keywords: | dislocation matrix characteristic value |
| 本文献已被 CNKI 等数据库收录！ | |